V N-Mg defect complexes as compensating centers in GaN:Mg

Rogozin, I. V.; Георгобиани, А. Н.; Kotlyarevsky, M. B.

doi:10.1134/s0020168508110125

Cited by 5 publications

(5 citation statements)

References 26 publications

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“…Therefore, the from the acceptor-like complex is the only species that contributes to δ. The relationship between the concentration of defect complexes and the constituent defects is given by where Z is the charge of the defect species, , cm –3 for ZnSe, and is the binding energy, which was estimated by (with R as the distance between the defects).…”

Section: Optical Characterizationmentioning

confidence: 99%

“…67 The defects associated with green emission involve the acceptor-like complex ( • V D Zn ), which were necessary to consider as it contains a zinc vacancy that is uncompensated by the substitutional impurity donor D. Therefore, the V Zn from the acceptor-like complex is the only species that contributes to δ. The relationship between the concentration of defect complexes and the constituent defects is given 68 where Z is the charge of the defect species, (with R as the distance between the defects).…”

Section: Nano Lettersmentioning

confidence: 99%

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Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

et al. 2019

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Characterizing point defects that produce deep states in nanostructures is imperative when designing next-generation electronic and optoelectronic devices. Light emission and carrier transport properties are strongly influenced by the energy position and concentration of such states. The primary objective of this work is to fingerprint the electronic structure by characterizing the deep levels using a combined optical and electronic characterization, considering ZnSe nanowires as an example. Specifically, we use low temperature photoluminescence spectroscopy to identify the dominant recombination mechanisms and determine the total defect concentration. The carrier concentration and mobility are then calculated from electron transport measurements using single nanowire field effect transistors, and the measured experimental data were used to construct a model describing the types, energies, and ionized fraction of defects and calculate the deviation from stoichiometry. This metrology is hence demonstrated to provide an unambiguous means to determine a material’s electronic structure.

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Section: Optical Characterizationmentioning

confidence: 99%

Section: Nano Lettersmentioning

confidence: 99%

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

et al. 2019

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“…For example, V N -Mg defect complexes have been reported. [42][43][44] In addition, the emission peak also became broader as T Mg rose; this also reflects the increase in defects from the side. From the above, it can be inferred that GaN crystals doped with Mg as an acceptor more effectively were obtained when T Mg reached 390 °C or higher.…”

Section: Properties Of Mg-doped Ganmentioning

confidence: 92%

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

Xue,

Taniguchi,

Oridate

et al. 2023

Jpn. J. Appl. Phys.

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In our past research, Group-III nitride nanopillar crystals were grown vertically on the multi-crystalline silicon substrate and applied to surface-emitting LEDs. To discuss the further possibilities of this kind of LEDs, such as application in deep visible, Mg-doped GaN and InGaN as important parts of the LEDs were grown under various conditions. Different testing experiments were carried out on these GaN-related samples to clarify their surface morphologies and luminescence characteristics. It was confirmed that Mg was successfully doped into GaN grown on the multi-crystalline silicon substrate. InGaN with a wide range of In-contents was obtained by using the same substrate. It is believed that these materials can be applied to various optoelectronic devices, especially large-area light-emitting devices with emissions of more colors, by analyzing the various properties.

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“…Like wide-gap II-VI semiconductors, GaN exhibits self-compensation, so neutralization of acceptor doping by native donors, which is energetically favorable for the crystal. There is a clear experimental evidence that GaN:Mg (Zn) films and crystals have high resistivity or are n-type owing to the compensation of acceptor impurities by native defects or unintentional H and O impurities [52,53]. The thermodynamic analysis of the defect chemistry in GaN:Mg crystals [54] suggests that, under equilibrium growth conditions, a MgGa acceptor controlled p-type can only be achieved at nitrogen (N 2 ) pressures above 10 4 MPa, in agreement with experimental data [55].…”

Section: Gan Nanostructured Materials Dopingmentioning

confidence: 99%

Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

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This paper presents a review of the recent advances of GaN based nanowires sensors. GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and useful in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications specially in nanowires sensors. GaN nanowires sensors have been used in many devices such as gas sensors, biosensors, and pressure sensors. The recent aspects of GaN based nanowires sensors are presented and discussed. The performance of several sensors based devices which have been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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V N-Mg defect complexes as compensating centers in GaN:Mg

Cited by 5 publications

References 26 publications

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

Review of GaN Nanowires Based Sensors

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