V-shaped inversion domains in InN grown on c-plane sapphire

Jasiński, Jacek B.; Liliental‐Weber, Z.; Lu, Hai; Schaff, William J.

doi:10.1063/1.1772863

Cited by 29 publications

(21 citation statements)

References 22 publications

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“…However, the polarity in the direction towards the interface is not necessarily totally opposite to the polarity towards the surface. Indeed, transmission electron microscopy has revealed V-shaped inversion domains in Mg-doped InN that nucleate 40-60 nm above the InN/GaN interface [13]. Also, the polarity of the buffer may not be totally opposite to the polarity of the InN film at the interface.…”

Section: Resultsmentioning

confidence: 98%

Electron accumulation at InN/AlN and InN/GaN interfaces

Veal¹,

Piper

Mahboob

et al. 2005

phys. stat. sol. (c)

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The electron accumulation at InN/AlN and InN/GaN interfaces is investigated in InN epilayers grown by molecular beam epitaxy. Hall measurements as a function of InN film thickness are used to determine the excess sheet density that results from both surface and interface charge accumulation. Using high-resolution electron-energy-loss spectroscopy (HREELS), the surface sheet density is found to be the same for InN films grown on both AlN and GaN buffer layers. The combination of the Hall and HREELS results indicates that the sheet density associated with the charge accumulation at the InN/buffer layer interface is significantly higher for AlN buffers (1.9 × 10 13 cm −2 ) than for GaN buffers (< 0.5 × 10 13 cm −2 ). This buffer layerdependence of the interface accumulation is discussed in terms of lattice mismatch and the effect of mixed polarity on the spontaneous polarization.

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Section: Resultsmentioning

confidence: 98%

Electron accumulation at InN/AlN and InN/GaN interfaces

Veal¹,

Piper

Mahboob

et al. 2005

phys. stat. sol. (c)

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“…Moreover, it appears that the co-existence of both polarities induces pyramidal growth around the inversion domains in GaN (Daudin et al, 1996;Romano & Myers, 1997) as well as in AlN (Jasinski et al, 2003) whereas the surface morphology is more complex for InN (Jasinski et al, 2004). For ternary alloys such as superlattices alloys AlGaN (Pécz et al, 2001) and InGaN (Mahanty et al, 1999), it was reported that IDs terminate by giving rise to inverted pyramidal defects at the surface.…”

Section: Introductionmentioning

confidence: 99%

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Ammar

Minj

Chauvat

et al. 2017

Journal of Microscopy

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SummaryDefects in quaternary InAlGaN barriers and their effects on crystalline quality and surface morphology have been studied. In addition to growth conditions, the quality of the GaN template may play an important role in the formation of defects in the barrier. Therefore, this work is focused on effects caused by threading dislocations (TDs) and inversion domains (IDs) originating from the underlying GaN. The effects are observed on the crystalline quality of the barrier and characteristic surface morphologies. Each type of TDs is shown to affect the surface morphology in a different way. Depending on the size of the corresponding hillock for a given pinhole, it was possible to determine the dislocation type. It is pointed out that the smallest pinholes are not connected to TDs whereas the large ones terminate either mixed type or edge type TDs. At sufficiently large layer thickness, the IDs originating from the GaN template lead to the formation of concentric trenches at the layer surface, and this is related to the change in growth kinetics on top and at the immediate surroundings of the ID.

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“…It has been shown that the shapes of IDs in nitrides are different: the IDs in GaN grown on sapphire substrate is narrow, straight house-like [12]; in AlN layers, the domains with a V-like shape are formed [13], for InN grown on csapphire substrate, the IDs are similar to that in AlN film with a V-like shape [14]. In our study, most of the IDs in AlGaN are house-like, as shown in Fig.…”

Section: Resultsmentioning

confidence: 94%