Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

Kanbur, Yasin; Irimia‐Vladu, Mihai; Głowacki, Eric Daniel; Voß, Gundula; Baumgartner, Melanie; Schwabegger, Günther; Leonat, Lucia; Ullah, Mujeeb; Sarica, Hizir; Erten-Ela, Şule; Schwödiauer, Reinhard; Sitter, H.; Küçükyavuz, Zühal; Bauer, Siegfried; Sariciftci, Niyazi Serdar

doi:10.1016/j.orgel.2012.02.006

Cited by 63 publications

(48 citation statements)

References 23 publications

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“…spin coating speed and drying conditions for TMSC; vacuum deposition rate and substrate temperature for chlorinated indigo respectively; improved deposition of contact electrodes by finding the optimum deposition rate for a reduced contact resistance) may lead to well‐balanced n‐ and p‐channels of the individual transistors. This fact may improve the inverter parameters dramatically, as was shown already with other H‐bonded molecules tyrian purple, indigo and quinacridone .…”

Section: Discussionsupporting

confidence: 56%

Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer

Petritz

Fian

Głowacki

et al. 2015

Physica Rapid Research Ltrs

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Thin film electronics fabricated with non‐toxic and abundant materials are enabling for emerging bioelectronic technologies. Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. The inverters operate both in the first and third quadrant, exhibiting a maximum static gain of 22 and a noise margin of 58% at a supply voltage of 14 V. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Section: Discussionsupporting

confidence: 56%

Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer

Petritz

Fian

Głowacki

et al. 2015

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“…Moreover, the indigoid-based nanodevices exhibited ambipolar operation with the electron ( μ e ) and hole ( μ h ) mobilities from 10 −2 to 0.2 cm 2 (V × s) −1 . In a more recent study, higher mobilities in Tyrian purple were also reported with the μ e and μ h values of 0.4 cm 2 (V × s) −1 [31]. However, the analyzed SET nanodevices are different from any conventional OFET, which only controls the charge density between the electrodes but on the single-electron transport through the energy modifications of molecular orbitals [32, 33].…”

Section: Resultsmentioning

confidence: 99%

In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach

et al. 2017

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The purpose of this study was to develop and implement an in silico model of indigoid-based single-electron transistor (SET) nanodevices, which consist of indigoid molecules from natural dye weakly coupled to gold electrodes that function in a Coulomb blockade regime. The electronic properties of the indigoid molecules were investigated using the optimized density-functional theory (DFT) with a continuum model. Higher electron transport characteristics were determined for Tyrian purple, consistent with experimentally derived data. Overall, these results can be used to correctly predict and emphasize the electron transport functions of organic SETs, demonstrating their potential for sustainable nanoelectronics comprising the biodegradable and biocompatible materials.Graphical AbstractIn silico model and gate coupling of indigoid single-electron nano-transistors Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2193-7) contains supplementary material, which is available to authorized users.

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“…Anodization of Aluminum Gate Electrode : Al 2 O 3 dielectric layer was grown electrochemically on a vacuum‐evaporated aluminum gate electrode, using a method reported originally by Majewski et al and have been used extensively by several research groups . 60 nm aluminum gate electrodes were evaporated thermally on a 1.5 × 1.5 cm glass slide using a thermal evaporator, at a typical pressure of ≈5 × 10 −6 mbar and a rate of ≈0.5 nm s −1 .…”

Section: Methodsmentioning

confidence: 99%

Cellulose‐Derivative‐Based Gate Dielectric for High‐Performance Organic Complementary Inverters

et al. 2015

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(>80%), [ 25,35,37,38 ] only few of those can combine low-voltage operation with high gain and suffi cient immunity against electrical noise. [ 39 ] Moreover, there have been few investigations of the infl uence of hysteresis and threshold voltage shifts on the inverter characteristics, which typically gives rise to electrical instabilities and performance limitations of those devices. [ 32,39 ] The inverter's noise margin is the most critical parameter, since it directly determines the maximum complexity of circuits. [ 22 ] Particularly, interesting applications of organic electronic circuits are found in analog electronics that allow for the read-out and processing of signals from printed large-area sensors and form an interface to silicon electronics. Examples are analog-to-digital (A/D) converters, operational amplifi ers, and comparators, all including several tens of transistors, thus requiring both high gain and a large noise margin to be functional as well as suffi cient processability.It is interesting to note that the majority of organic complementary inverters already mentioned [24][25][26][27][28][29][30][31][32][33][34][36][37][38][39][40] relied on pentacene as the p-type semiconductor (14 incidences), fl uorinated copper phthalocyanine (6 incidences), or N , N ′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (5 incidences) as the n-type material. On the contrary, the variation in gate dielectric materials that are used is much higher with an emphasis on hybrid dielectric systems. Hybrid systems allow accounting for both a high dielectric breakdown voltage and an engineered interface to the semiconductor. Moreover, the implementation of biodegradable and biocompatible materials represents a new niche in the organic electronics research, aimed to address the issues of cost and toxicity to humans and environment posed by nowadays electronics, a topic that was recently reviewed elsewhere. [41][42][43] Accordingly, we have demonstrated the usage of a novel hybrid and biodegradable highk gate dielectric material system based on a cellulose derivative for low-voltage complementary organic circuits with exceptional high noise margins. [ 35 ] Previous work done in our laboratories demonstrated the fabrication feasibility of complex circuits, where the electrode patterning was performed by a self-aligned photolithography technique. [ 44,45 ] This process can easily be transferred to an anodized aluminum (Al 2 O 3 ) + trimethylsilyl cellulose (TMSC) based bilayer system; the respective results will be published soon.To follow on this preliminary work we have developed an extraordinarily well-performing complementary inverter technology based on a hybrid dielectric composed of a bilayer of alumina (Al 2 O 3 ) and trimethylsilyl cellulose (TMSC) and pentacene or C 60 for the p-channel and the n-channel organic semiconductor, respectively. It outperforms any inverter reported so far with respect to the combination of excellent key parameters, such as record DC gain of above 500 V/V, low operation voltage o...

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Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

Cited by 63 publications

References 23 publications

Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer

Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer

In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach

Cellulose‐Derivative‐Based Gate Dielectric for High‐Performance Organic Complementary Inverters

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