Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO<sub>2</sub>

Kurosawa, Kou; Takigawa, Yasuo; Sasaki, Wataru; Katto, Masahito; Inoue, Yuriko

doi:10.1143/jjap.30.3219

Cited by 13 publications

(5 citation statements)

References 8 publications

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“…The intermediate shank part has an oxygen-poor stoichiometry (Si 2 O) since the oxygen atoms were taken to the top part of the pipette during the fabrication process [16]. It is known that the oxygen-poor stoichiometry in glass can be produced with KrF excimer laser [17], Ar 2 excimer laser [18], and synchrotron radiation [19]. The puller used in this study can produce the temperature more than the melting temperature of boron silicate.…”

Section: Resultsmentioning

confidence: 99%

Coating the Outer Surface of Glass Nanopipette with Chlorobenzene-Terminated Polysiloxane

Takami

Ojiro

Ogawa

et al. 2015

e-J. Surf. Sci. Nanotech.

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A method of outer surface modification of glass nanopipette with chlorobenzene-terminated organopolysiloxane has been developed. Scanning electron microscope images and microscopic Raman spectra revealed the efficacy of the coating. Energy dispersive X-ray spectra showed not only the materials adsorbed on the nanopipette but also the change in stoichiometry of the bulk glass resulting from the fabrication process of the nanopipette with a laser puller. The coating method is easy to treat and can be used for various applications such as the prevention of carbon contamination from the materials during the injection to biomaterials such as living cells.

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Section: Resultsmentioning

confidence: 99%

Coating the Outer Surface of Glass Nanopipette with Chlorobenzene-Terminated Polysiloxane

Takami

Ojiro

Ogawa

et al. 2015

e-J. Surf. Sci. Nanotech.

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“…As shown in the Si 2p spectrum in Figure b, the polysilole siloxane thin films fabricated from 0.1 wt % precursor solution showed two prominent peaks, where the former peak was due to the Si atoms in the thin films and the latter to the Si atoms of the silicon substrate, owing to its relatively low thickness. Because the binding energy of the Si 2p electrons from the silicon substrate -bulk silicon- is 99.3 eV, the latter peak was calibrated to 99.3 eV and, hence, positioned the former peak to 102.8 eV without further consideration. The peak at 99.9 eV might arise from a Si atom at an imperfect oxidation state of +1, in the shallow native-oxide layer between the polysilole siloxane film and Si wafer .…”

Section: Resultsmentioning

confidence: 99%

Observation of Negative Charge Trapping and Investigation of Its Physicochemical Origin in Newly Synthesized Poly(tetraphenyl)silole Siloxane Thin Films

et al. 2011

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A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane, was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings were responsible for negative charge trapping, while the Si-O-Si inorganic linkages provided the intrachain energy barrier for controlling electron transport. The polysilole siloxane dielectric thin films were fabricated by spin-coating and curing of the polymers, followed by characterization with spectroscopic ellipsometry (SE), near edge X-ray absorption fine structure spectroscopy (NEXAFS), and photoemission spectroscopy (PES). The abrupt increase in density and decrease in thickness of the thin film at a curing temperature of 100 °C was attributed to a thermodynamically preferred state in the nanoscopic arrangement of the polymer chains; this was due to cofacial π-π interactions in a skewed manner between peripheral phenyl groups of the (tetraphenyl)silole rings of the adjacent polymer chains. Using the NEXAFS spectrum to assess high electron affinity, the LUMO energy level of the dielectric thin film cured at 150 °C was positioned 1 eV above the Fermi energy level (E(F)). The electron trapping of the dielectric thin films was confirmed from the positive flat band shift (ΔV(FB)) in the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure, which strongly verified the polymer design concept. From the simple kinetics model of the electron transport, it was proposed that the flat band shift (ΔV(FB)) or trap density of the negative charges (|ρ|) was logarithmically proportional to the decay constant (β) for the electron-tunneling process. When a phenyl group of a silole ring in a polymer chain was inserted into the two available phenyl groups of another silole ring in another polymer chain, the electron transfer between the groups was enhanced, decreasing the trap density of the negative charges (|ρ|). For the thermodynamically preferred state generating the high refractive index, the distance between the two phenyl groups of the adjacent polymer chains was estimated to be in the range of 0.27-0.36 nm.

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“…Kurosawa et al have observed that argon (9.8 eV, 126.5 nm) excimer laser irradiation transforms the surfaces of the SiO 2 to Si (i.e., the 9.8 eV induces desorption and Si precipitation in the surface layers of the SiO 2 ) [66]. Kurosawa et al have observed that argon (9.8 eV, 126.5 nm) excimer laser irradiation transforms the surfaces of the SiO 2 to Si (i.e., the 9.8 eV induces desorption and Si precipitation in the surface layers of the SiO 2 ) [66].…”

Section: Opticalmentioning

confidence: 99%

“…Thus, the VUV photons from the argon laser are capable of causing surface alteration [66]. A high density of excitons can stimulate breaking of Si-O bonds, which can result in Si precipitation and oxygen desorption on the SiO 2 surface.…”

Section: Opticalmentioning

confidence: 99%

CCD Image Sensors in Deep-Ultraviolet

2005

Microtechnology and Mems

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The series Microtechnology and MEMS comprises text books, monographs, and state-of-the-art reports in the very active field of microsystems and microtechnology. Written by leading physicists and engineers, the books describe the basic science, device design, and applications. They will appeal to researchers, engineers, and advanced students. Mechanical MicrosensorsThe use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specif ic statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use.Typesetting: by the authors and TechBooks using a Springer L A T E X macro package Cover concept: eStudio Calamar Steinen Cover production: design & production GmbH, HeidelbergPrinted on acid-free paper 57/3141/jl -5 4 3 2 1 0 VI Preface identified. Because the mechanisms are associated with the Si-SiO 2 system, the analysis can also be extended to other silicon-based UV sensor architectures. Potential design optimization techniques to improve the quantum efficiency (QE) and stability of CCD sensors at DUV wavelengths are discussed in Part VI, followed by concluding remarks and recommendations for future research. A better understanding of the mechanisms underlying DUVinduced degradation of CCD sensors can assist in the design and development of new-and-improved DUV-sensitive CCD sensors.

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Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO₂

Cited by 13 publications

References 8 publications

Coating the Outer Surface of Glass Nanopipette with Chlorobenzene-Terminated Polysiloxane

Coating the Outer Surface of Glass Nanopipette with Chlorobenzene-Terminated Polysiloxane

Observation of Negative Charge Trapping and Investigation of Its Physicochemical Origin in Newly Synthesized Poly(tetraphenyl)silole Siloxane Thin Films

CCD Image Sensors in Deep-Ultraviolet

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Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO2

Cited by 13 publications

References 8 publications

Coating the Outer Surface of Glass Nanopipette with Chlorobenzene-Terminated Polysiloxane

Coating the Outer Surface of Glass Nanopipette with Chlorobenzene-Terminated Polysiloxane

Observation of Negative Charge Trapping and Investigation of Its Physicochemical Origin in Newly Synthesized Poly(tetraphenyl)silole Siloxane Thin Films

CCD Image Sensors in Deep-Ultraviolet

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Vacuum Ultraviolet Laser-Induced Surface Alteration of SiO₂