Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S-treated GaAs (100) surfaces

Spindt, C. J.; Liu, D.; Miyano, K. E.; Meißner, Paul; Chiang, Tihao; Kendelewicz, T.; Lindau, I.; Spicer, W. E.

doi:10.1063/1.101780

Cited by 129 publications

(60 citation statements)

References 14 publications

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“…It may be mentioned here that the removal of native oxide from GaAs by Na 2 S treatment is more effective than ͑NH 4 ͒ 2 S treatment since the weak acid H 2 S or weak base NH 4 OR is less active than the strong base NaOR, with R being the proton for water. However, at the same time, Na 2 S leaves hydrated salt residue and so there will be more oxygen than sulfur on the surface, 10 which is unwanted for MOS devices. The gate dielectric ZrO 2 was made by the sol-gel technique.…”

Section: Methodsmentioning

confidence: 99%

Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz

Kundu

Roy

Banerji

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Methodsmentioning

confidence: 99%

Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz

Kundu

Roy

Banerji

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Active sulphur end of the thiol replaces oxygen atoms and creates sulphur bonds on the surface. It cleans the surface from conductive native oxides and satisfies dangling bonds [10][11][12]. Although thiol is mostly studied on GaAs [13][14][15][16] surfaces, some studies on InP [17], GaP [18], and InAs [11,12] and other III-V compounds have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Thiol passivation of MWIR type II superlattice photodetectors

2013

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Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH 3 (CH 2 ) 17 SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation.

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“…Several methods have been developed for passivation of GaAs(100) surfaces [4][5][6]. In this work we used a sulphur passivation method, which has recently received attention due 5 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Preparation and passivation of GaAs(001) surfaces for growing organic molecules

et al. 2002

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Growth of ordered organic films of 3, 4, 9, 10-perylene-tetracarboxylic-dianhydride (PTCDA), on inorganic substrates of GaAs (001) is investigated by means of low-energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The passivation of the sample can be achieved by exposing the substrate to sulphur (the SnS 2 compound) or wet-chemical etching using an S-containing etchant (S 2 Cl 2 ). The sulphur-treated surfaces are less reactive and are suitable as substrates for the growth of epitaxial films. In this work we have compared the growth of organic molecules on substrates prepared by two different methods. The samples prepared by molecular beam epitaxy (MBE) present smoother surfaces compared with chemically treated samples. Therefore, an improvement of the PTCDA molecular order is observed for the MBE samples, which exhibit the formation of crystals.

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Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S-treated GaAs (100) surfaces

Cited by 129 publications

References 14 publications

Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz

Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz

Thiol passivation of MWIR type II superlattice photodetectors

Preparation and passivation of GaAs(001) surfaces for growing organic molecules

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