Valence and conduction band offsets of <i>β</i>-Ga2O3/AlN heterojunction

Sun, Haiding; Castanedo, C. G. Torres; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Li, Xinwei; Li, Jingtao; Li, Xiaohang

doi:10.1063/1.5003930

Cited by 84 publications

(61 citation statements)

References 36 publications

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“…4b, the BE of Ga 3d CL and VBM from few-layer β-Ga 2 O 3 were deduced to be 20.25 ± 0.05 and 3.23 ± 0.05 eV, respectively. The corresponding BED was determined to 17.02 ± 0.1 eV, which is well consistent with that reported by Sun et al [31]. Figure 4c depicts the measured XPS spectra of Mo 3d and Ga 3d CLs for MoS 2 /β-Ga 2 O 3 heterojunctions with/without nitridation.…”

Section: Resultssupporting

confidence: 88%

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Huan

Liu

et al. 2019

Nanoscale Res Lett

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Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3(01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

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Section: Resultssupporting

confidence: 88%

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Huan

Liu

et al. 2019

Nanoscale Res Lett

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“…The VBM of the β‐Ga 2 O 3 sample was measured to be 4.3 eV. The energy difference between the Ga3d core level and VBM

[E_{V C} = (E_{normalG normala normal3 normald}^{{normalG normala}_{2} O_{3}} - E_{normalV normalB normalM}^{{normalG normala}_{2} O_{3}})]

for the β‐Ga 2 O 3 sample was obtained to be 17.0 eV, which is comparable with the previous study . Figure d shows the XPS spectra of Ga3d peak for the graphene/β‐Ga 2 O 3 with a core level binding energy at 21.0 eV

(E_{normalG normala normal3 normald}^{normalG normalr normala normalp normalh normale normaln normale / {normalG normala}_{2} O_{3}}) .

Figure e shows the C1s spectra for the graphene coated β‐Ga 2 O 3 sample , the core level binding energy 285 eV as observed for other transferred monolayer graphene.…”

mentioning

confidence: 51%

Photovoltaic Action in Graphene–Ga₂O₃ Heterojunction with Deep‐Ultraviolet Irradiation

Kalita

Mahyavanshi

Desai

et al. 2018

Physica Rapid Research Ltrs

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We demonstrate the fabrication of a monolayer graphene/β-Ga 2 O 3 heterostructure and its interesting prospect of producing a suitable Schottky barrier potential for deep-ultraviolet (DUV) responsive photovoltaic device. The transient response behavior shows a faster response time for photovoltaic mode operation of the photodiode. The fast response at a zero bias is due to generation of photocurrent under an internal built-in field in the graphene/Ga 2 O 3 interface without any contribution from the trapped carriers. The fabricated device also shows an excellent photoresponsivity of 6.1 A W À1 with a slower response time at a low reverse bias voltage (À1.5 V). The high photoresponsivity at a bias voltage can be related to carrier multiplication due to carriers trapping/release process. Our findings show that the graphene/β-Ga 2 O 3 heterostructure can be significant for selfpowered/low power consuming DUV detector applications.

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“…A high-resolution X-ray photoelectron spectroscopy (HR-XPS) was implemented to collect the energy core levels (CLs) for each element and photoemission spectra of the individual layer. This technique is widely adopted to investigate the VBOs of two semiconductor materials at the interface including our previous studies [15][16][17][18]. The B 0.14 Al 0.86 N layer of Sample C must be thin enough to allow the CLs spectra from the bottom GaN layer to be detected.…”

Section: Materials Growth and Methodsmentioning

confidence: 99%

“…The XPS study was performed in a Kratos Axis Supra DLD spectrometer which has a monochromatic Al K α X-ray source (hν = 1486.6 eV). The details of the spectrometer setup can be referred elsewhere [15,16]. The C 1 s peak (binding energy is 284.8 eV) was used as the reference to extract the values for all CLs.…”

Section: Materials Growth and Methodsmentioning

confidence: 99%

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

Sun

Park

et al. 2018

Applied Surface Science

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Wurtzite BAlN alloy with large bandgap is an emerging material system for UV optoelectronic and power devices. In this study, the BAlN/GaN heterojunction with a sharp interface and uniform distribution of the elements was formed by careful control of epitaxial conditions to avoid GaN desorption and parasitic reactions whose band alignment was then measured for the first time. The valence band offset (VBO) was found to be nearly-zero, i.e. −0.2 ± 0.2 eV, in the B 0.14 Al 0.86 N/GaN heterojunction by X-ray photoelectron spectroscopy. Additionally, the conduction band offset (CBO) is estimated at 2.1 ± 0.2 eV, which is the largest reported CBO among epitaxial GaN-based heterojunctions. In comparison to the type-I Al 0.75 Ga 0.25 N/GaN heterojunction (both Al 0.75 Ga 0.25 N and B 0.14 Al 0.86 N alloy have the same bandgap of 5.7 eV), the CBO and VBO of the B 0.14 Al 0.86 N/GaN heterostructure are significantly larger and smaller, respectively. The nearly-zero VBO and the very large CBO of the B 0.14 Al 0.86 N/ GaN heterojunction could potentially lead to considerable performance enhancement for GaN optoelectronics and power electronics devices.

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Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

Abstract: FIG. 7. The band alignment diagram of the b-Ga 2 O 3 /AlN heterojunction, along with that of GaN.

Cited by 84 publications

References 36 publications

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Photovoltaic Action in Graphene–Ga₂O₃ Heterojunction with Deep‐Ultraviolet Irradiation

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

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Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

Abstract: FIG. 7. The band alignment diagram of the b-Ga 2 O 3 /AlN heterojunction, along with that of GaN.

Cited by 84 publications

References 36 publications

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Photovoltaic Action in Graphene–Ga2O3 Heterojunction with Deep‐Ultraviolet Irradiation

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

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Photovoltaic Action in Graphene–Ga₂O₃ Heterojunction with Deep‐Ultraviolet Irradiation