Valence band densities of states of CdIn2S4 and In2S3 from x-ray photoelectron spectroscopy

Semiconductor Sensitization by Microcrystals of MgIn2S4 on Wide Bandgap MgIn2O4

“…The observed similarities of the action spectra of MgIn S "MgIn O electrodes to those of In S "In O electrodes (19) may be due to common features of the electronic structure of MgIn S and In S . Previous studies have shown that the electronic structure of CdIn S has some features in common with those of CdS and In S (20). The variation of the maximum attainable photocurrent of the Pt"polysul"de"MgIn S "MgIn O cell as a function of sulfurization time is shown in Fig.…”

Electronic, optical and transport properties of α-, β- and γ-phases of spinel indium sulphide: An ab initio study

“…In Fig. 6, we compare the experimental peak due to In 4d states from the XPS [9] data with the FP-LAPW calculated values. The In 4d states for a-, b-and g-phases are found deep in the valence band and contribute at energy locations of À13.25, À13.77 and À13.6 eV respectively.…”

“…Valence band densities of states of CdIn 2 S 4 and In 2 S 3 were measured using X-ray photoelectron spectroscopy (XPS) [9]. Lefebvre et al performed tight binding calculation to study the SnSeIn 2 S 3 eSnS 2 system [10].…”

Compositional, Structural and Optical Properties Analysis of ?-In2S3 Thin Films Prepared by Chemical Spray Pyrolysis at Different Substrate Temperatures

“…Indium sulfide (In 2 S 3 ) is a III-VI compound originating from the II-VI semiconductor by replacing group II metals by group III elements [5].In 2 S 3 exhibits different polymorphic structures such as α, β and γ de pending on the processing parameters [6].The β -In 2 S 3 phase was found to be the stable crystalline phase of indium sulfide at room temperature with tetragonal structure [7]. In 2 S 3 films are prepared by various methods such as chemical bath deposition [8], thermal evaporation [9] ,electrodeposition [10], spray pyrolysis [11,12,13] radiofrequency (rf) sputtering [14,15] and atomic layer epitaxy [16]. In this paper we report the preparation of β indium sulphide (β-In 2 S 3 ) thin films using the chemical spray pyrolysis (CSP) technique at different substrate temperatures.…”