2023
DOI: 10.1103/physrevb.108.085419
|View full text |Cite
|
Sign up to set email alerts
|

Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
4

Relationship

1
3

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 56 publications
1
1
0
Order By: Relevance
“…Such features (but with electron confinement) have been observed in graphene with gate-defined quantum dots [37,38]. The incident electrons are trapped without internal reflections that occur when they are confined inside the QDs [27,28]. In our case, the confinement occurs outside them, between the left and right QDs, and results from the vanishing of the inter-dot hopping when we vary D LR .…”
Section: Valley-hall Signals and Valley Quasi-bound States In Aqdssupporting
confidence: 61%
See 1 more Smart Citation
“…Such features (but with electron confinement) have been observed in graphene with gate-defined quantum dots [37,38]. The incident electrons are trapped without internal reflections that occur when they are confined inside the QDs [27,28]. In our case, the confinement occurs outside them, between the left and right QDs, and results from the vanishing of the inter-dot hopping when we vary D LR .…”
Section: Valley-hall Signals and Valley Quasi-bound States In Aqdssupporting
confidence: 61%
“…Recent advances in achieving quantum confinement in graphene-based systems have opened new paths to lifting the valley degeneracy, using graphene quantum dots (GQDs) and the induced effects by electrostatic potentials and magnetic or pseudo-magnetic fields in nanobubble QDs [9,[27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%