2012
DOI: 10.1103/physrevlett.108.256402
|View full text |Cite
|
Sign up to set email alerts
|

Vanadium Dioxide: A Peierls-Mott Insulator Stable against Disorder

Abstract: Vanadium dioxide undergoes a first order metal-insulator transition at 340 K. In this work, we develop and carry out state of the art linear scaling DFT calculations refined with non-local dynamical mean-field theory. We identify a complex mechanism, a Peierls-assisted orbital selection Mott instability, which is responsible for the insulating M1 phase, and furthermore survives a moderate degree of disorder.

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

12
165
2

Year Published

2013
2013
2022
2022

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 180 publications
(179 citation statements)
references
References 37 publications
12
165
2
Order By: Relevance
“…4 displays that γ basically depends on K ρ as predicted by Eq. (10). This means that the long-range localization properties of the AEM can be understood in the framework of AtV M with an effective intersite interaction induced by the bosonic degrees of freedom.…”
Section: Dmrg Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…4 displays that γ basically depends on K ρ as predicted by Eq. (10). This means that the long-range localization properties of the AEM can be understood in the framework of AtV M with an effective intersite interaction induced by the bosonic degrees of freedom.…”
Section: Dmrg Resultsmentioning
confidence: 99%
“…6 An understanding of how disorder and interaction act together is of vital importance not only to discuss the metalinsulator itself but also to analyze the electronic properties of many quasi-1D materials of current interest, such as conjugated polymers, organic charge transfer salts, ferroelectric perovskites, halogen-bridged transition metal complexes, TMT[SF,TF] chains, Qn(TCNQ) 2 compounds, or, e.g., the quite recently studied vanadium dioxide Peierls-Mott insulator. [7][8][9][10] Carbon nanotubes 11 and organic semiconductors 12 are other examples where disorder and bosonic degrees of freedom are of importance. Regarding interacting bosons, ultracold atoms trapped in optical lattices offer the unique possibility to tune both the disorder and interaction strength.…”
Section: Introductionmentioning
confidence: 99%
“…Since linear-scaling DFT methods are also available [52], the linear-scaling property of our solver opens up the possibility of studying correlated systems with extremely large supercells [53][54][55]-even containing several hundreds of correlated atoms.…”
Section: The Gutzwiller Approximation For the Hubbard Modelmentioning
confidence: 99%
“…First, there has always been an interest in whether a specific system was a Mott insulator or a Peierls insulator, such as in vanadates and manganites and many related oxide systems. [27][28][29] However, it is not so easy to follow the electronic structure across a transition where the atomic structure varies. Second, there is growing interest in using correlated oxide systems such as vanadium oxides in microelectronics, such as in high switching current Mott field effect transistors or "Mott-FETs," [30][31][32] in non-volatile resistive random access memories (RRAM), 33 and in fast optical switches.…”
Section: Introductionmentioning
confidence: 99%