Vanadium Oxide Thin-Film Variable Resistor-Based RF Switches

Pan, KuanChang; Wang, Weisong; Shin, Eunsung; Freeman, Kelvin; Subramanyam, Guru

doi:10.1109/ted.2015.2451993

Cited by 44 publications

(10 citation statements)

References 25 publications

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“…Then the top metal layer (Ti 20 nm/Au 300 nm) is put on by ebeam evaporation and lift-off process. The measured XRD of the wafer and the SEM image of the VO 2 are shown in Figure 3 where the VO 2 film is formed at (0, 2, 0) on a SiO 2 surface compared to (0, 1, 1) on a sapphire surface in the previous research [14]. Before the electrical test, a layer of photoresist is used to cover the VO 2 area with only metal contact exposed to the air.…”

Section: Introductionmentioning

confidence: 97%

“…In order to make this property useful in microelectronics, ideally the resistivity ratio between these two phases needs to be as high as possible. A pulsed laser deposition (PLD) process has been developed by our group to obtain high quality VO 2 thin films on sapphire [14] and silicon dioxide substrates. In this study, a tunable inductor is implemented using VO 2 thin film switches, utilizing the large resistivity change between the insulating and conducting states, Compared to other tunable inductor structures [1][2][3][4], designs in this article use only a single layer of VO 2 to accomplish tunability.…”

Section: Introductionmentioning

confidence: 99%

“…200 nm). A 150 nm thick VO2 thin film is deposited by Pulsed Laser Deposition at 5008C [14] and patterned using a dry etch process with the etch gas of SF 6 . Then the top metal layer (Ti 20 nm/Au 300 nm) is put on by ebeam evaporation and lift-off process.…”

Section: Introductionmentioning

confidence: 99%

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Tunable inductors using vanadium dioxide as the control material

Wang

Shin

et al. 2017

Micro & Optical Tech Letters

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This article experimentally studies the application of vanadium dioxide (VO 2 ) thin film for tunable inductor design. VO 2 's temperature-dependent conductivity is used for implementing a tunable inductor using VO 2 as the control material. Two different configurations of inductors are designed. One design uses a short VO 2 bar as a circuit switch and the other uses VO 2 to replace the full spiral coil inductor. The frequency range in the experiments is 0.3-2 GHz. Experimental results show a 32% tuning range (1-0.68 nH) through applied temperature variation (25-1008C) in the devices. These results are matched by a working circuit p model. ABSTRACT:In this work, a dual bands omnidirectional monopole antenna is proposed. A planer Y-shaped patch is loaded on the top of the surface and a slot is loaded on the ground plane to obtained broadband. Rogers RT/duroid5880(tm) substrate is used with dielectric constant 2.2 and loss tangent 0.0009. The results of the proposed antenna for the variation of width and length of the ground plane are investigated. Two licensed free frequency bands at 2.4 GHz and 5.8 GHz are obtained for WiFi and Bluetooth application. The measured frequency bands of 2.3-2.52 GHz at 2.4 GHz and 4.22-10.30 GHz with two resonant frequencies at 4.96 and 8.36 GHz are obtained. The peak antenna gain of 4.6 dBi at 2.4 GHz is achieved. Simulation has been done using MOM base Ansoft designer software.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Tunable inductors using vanadium dioxide as the control material

Wang

Shin

et al. 2017

Micro & Optical Tech Letters

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“…Hillman et al [62] demonstrated inverted microstrip line type device with integrated heater. Pan et al [63] implemented CPW series type RF device with an integrated heater as shown in Figure 9, the same time of the device was demonstrated earlier with an external heater [60]. Pt heater is fabricated on top of VO 2 CPW structure with silicon dioxide (SiO 2 ) as isolation layer.…”

Section: Thermally Triggered Rf Switchesmentioning

confidence: 94%

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

2018

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Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transition (MIT) materials great candidates for direct current (DC) and radio frequency (RF) switching applications. In the literature, germanium telluride (GeTe), a PCM, and vanadium dioxide (VO 2), an MIT material have been widely investigated for DC and RF switching applications due to their remarkable contrast in their OFF/ON state resistivity values. In this review, innovations in design, fabrication, and characterization associated with these PCM and MIT material-based RF switches, have been highlighted and critically reviewed from the early stage to the most recent works. We initially report on the growth of PCM and MIT materials and then discuss their DC characteristics. Afterwards, novel design approaches and notable fabrication processes; utilized to improve switching performance; are discussed and reviewed. Finally, a brief vis-á-vis comparison of resistivity, insertion loss, isolation loss, power consumption, RF power handling capability, switching speed, and reliability is provided to compare their performance to radio frequency microelectromechanical systems (RF MEMS) switches; which helps to demonstrate the current state-of-the-art, as well as insight into their potential in future applications.

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“…In recent years, with the development of phase change materials, it has been found that the optical properties of VO 2 phase change material change with temperature. Therefore, VO 2 materials are gradually applied to achieve dynamic tunability of optical devices [1,2,3] and RF electronics [4,5]. The VO 2 phase transition is generally considered as an insulator-metal phase transition, which includes the insulator state, metallic state and the transition state between them.…”

Section: Introductionmentioning

confidence: 99%

Dynamically Temperature-Voltage Controlled Multifunctional Device Based on VO2 and Graphene Hybrid Metamaterials: Perfect Absorber and Highly Efficient Polarization Converter

Mao

Liang

et al. 2019

Nanomaterials

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Vanadium dioxide (VO2) is a temperature phase change material that has metallic properties at high temperatures and insulation properties at room temperature. In this article, a novel device has been designed based on the dielectric metasurface consisting of VO2 and graphene array, which can achieve multiple functions by adjusting temperature and voltage. When the temperature is high (340 K), the device is in the absorption state and its absorptivity can be dynamically controlled by changing the temperature. On the other hand, the device is in the polarization state under room temperature, and the polarization of electromagnetic waves can be dynamically controlled by adjusting the voltage of graphene. This device can achieve a broadband absorber (the maximum absorptance reaches 99.415% at wavelengths ranging from 44 THz to 52 THz) and high polarization conversion efficiency (>99.89%) in the mid-infrared range, which has great advantages over other single-function devices. Our results demonstrate that this multifunctional device may have widespread applications in emitters, sensors, spatial light modulators, IR camouflages, and can be used in thermophotovoltaics and wireless communication.

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Vanadium Oxide Thin-Film Variable Resistor-Based RF Switches

Cited by 44 publications

References 25 publications

Tunable inductors using vanadium dioxide as the control material

Tunable inductors using vanadium dioxide as the control material

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

Dynamically Temperature-Voltage Controlled Multifunctional Device Based on VO2 and Graphene Hybrid Metamaterials: Perfect Absorber and Highly Efficient Polarization Converter

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