Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

Castro, Marcelo S. B.; Ferreira, C. L.; Avillez, Roberto R. de

doi:10.1016/j.infrared.2013.03.001

Cited by 54 publications

(29 citation statements)

References 25 publications

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“…The VO 6 octahedra in this lattice feature an important distortion leaving an appearance of square pyramids that share their basal edges forming zigzag double chains along the (001) direction . Computational thermodynamics shows that this compound is stable up to its melting point under oxygen partial pressures exceeding 100 Pa . Under the application of an external pressure, V 2 O 5 shows a 25‐fold increase in the electric conductivity .…”

Section: Structure‐composition‐properties Interplaymentioning

confidence: 99%

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase

Bahlawane¹,

Lenoble²

2014

Chemical Vapor Deposition

156

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The structure‐driven properties of vanadium oxide have inspired enormous developments in the last decades, especially as a smart material for energy, sensors, and optoelectronics. The large variety of stable and metastable structures of vanadium oxide is discussed, based on the calculated formation energies and a broad overview of their structure‐related properties. The established chemical deposition processes from the gas phase are reviewed with a particular emphasis on the implemented precursors and the obtained vanadium oxide phases. Although a significant fraction of relevant vanadium oxide compounds is achieved by these methods, there are still rewarding challenges related to their controlled elaboration and the investigation of their responsive properties.

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Section: Structure‐composition‐properties Interplaymentioning

confidence: 99%

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase

Bahlawane¹,

Lenoble²

2014

Chemical Vapor Deposition

156

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“…A broad review of the common deposition techniques distinguishes between traditional vacuum methods that require a cleanroom setup for accomplishing the task versus room temperature methods whereby the deposition occurs through chemical processes that are carried at the ambient temperature. Variations of physical deposition techniques such as reactive ion beam sputtering, RF sputtering and e-beam evaporation are some of the most commonly employed methods to deposit vanadium oxide thin films [11]- [14]. The majority of these techniques produce films with TCR values in the range of -2%°C -1 to -3%°C -1 .…”

Section: Introductionmentioning

confidence: 99%

Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Grayli

Leach

Bahreyni

2018

Sensors and Actuators A: Physical

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Vanadium pentoxide thin films have been deposited on quartz substrates via sol-gel synthesis and dip coating. The process was developed to establish a reliable and inexpensive method to produce thin films with a high temperature coefficient of resistance (TCR) for sensing applications. Sol-gel precursor concentration and post-deposition annealing conditions were varied to address their effects on film composition, morphology, structure, resistivity, and TCR response. The resulting thin films were structurally characterized by thin film profilometry, x-ray diffraction, scanning electron microscopy, and Raman spectroscopy. Resistivity and TCR measurements were carried out to determine their efficacy as sensor materials. Both low and high concentration alkoxide sol-gel precursors led to films of pure α-V2O5 composition but with characteristically different structural and electrical properties. Low concentration films showed a modest decrease in resistivity and TCR with increasing annealing temperature, consistent with the formation of increasing grain size and the coalescence of largely planar grains with common crystalline orientation. In contrast, films fabricated from higher alkoxide precursor

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“…To facilitate the rational design and optimize the performance of such devices, it is important to understand the intrinsic electronic characteristics of V 2 O 5 . Various methods have been used to grow V 2 O 5 thin films, including flash-evaporation of V 2 O 5 , pulsedlaser deposition, magnetron sputtering, chemical vapor deposition, and spray pyrolysis [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of thermally evaporated V2O5 epitaxial thin films

et al. 2016

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This study investigated the physicochemical properties of a V 2 O 5 thin film deposited on c-plane sapphire through thermal evaporation at a relatively high pressure. Using atomic force microscopy (AFM), x-ray diffraction (XRD) and a suite of x-ray spectroscopic techniques, it was shown that a high quality epitaxial V 2 O 5 thin film was achieved. AFM step height analysis demonstrated that the film thickness was ~50 nm with a surface roughness of 1.5 Å, as determined by root mean square roughness measurements. XRD analysis verified that the film was highly crystalline with a (0001) orientation on the substrate. Vanadium was predominantly in the 5+ oxidation state, with contributions from V 4+ states at the surface, shown by x-ray photoemission spectroscopy analysis x-ray absorption spectroscopy further confirmed the predominant presence of V 5+ in an octahedral crystal field. The existence with bulk V 4+ states was shown through V Ledge x-ray emission spectroscopy which demonstrated the presence of d-d crystal field transitions in an otherwise d 0 transition metal oxide. The data suggests that by increasing the partial pressure of oxygen in the vacuum chamber during growth, thermal evaporation can be used as a cheap and efficient way of growing stoichiometric V 2 O 5 thin films.

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Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

Cited by 54 publications

References 25 publications

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase

Vanadium Oxide Compounds: Structure, Properties, and Growth from the Gas Phase

Sol-gel deposition and characterization of vanadium pentoxide thin films with high TCR

Structural and electronic properties of thermally evaporated V2O5 epitaxial thin films

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