Vapor-grown InGaP/GaAs solar cells

Olsen, G.H.; Ettenberg, M.; D'Aiello, R.V.

doi:10.1063/1.90477

Cited by 36 publications

(14 citation statements)

References 6 publications

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“…[5][6][7][8][9] Previously, we focused on hydride vapor phase epitaxy (HVPE) to decrease the cost associated with epitaxial growth in III-V solar cells. [10][11][12][13] In the conventional growth method, that is, metalorganic chemical vapor deposition (MOCVD), expensive organic metals and a high V/III ratio result in high production costs. For HVPE, inexpensive metal chlorides can be used as group-III precursors via in situ reactions involving pure metals and HCl gas to achieve low epitaxial costs.…”

Section: Introductionmentioning

confidence: 99%

28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

et al. 2021

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Hydride vapor phase epitaxy (HVPE) is a III–V device fabrication technology that has received attention owing to its low production costs. The properties of passivation layers used to reduce surface and interface recombination losses in III–V materials considerably contribute to the performance of various devices. Herein, solar cells based on AlInGaP back‐surface field (BSF) layers grown via HVPE using aluminum trichloride as the group‐III precursor for Al deposition are presented. Although high‐concentration Si contamination occurs in Al‐containing layers grown using HVPE, AlInGaP with p‐type conductivity can be grown by doping with high‐concentration Zn. For InGaP single‐junction solar cells, the short‐circuit current density and open‐circuit voltage are improved by introducing the AlInGaP BSF layer. Consequently, the InGaP single‐junction solar cells measured under air mass 1.5 global solar spectrum illumination achieve a conversion efficiency of 17.1%. Furthermore, the progress in the development of tandem solar cells grown using HVPE is reported. By improving the performance of the InGaP top cells, InGaP/GaAs tandem cells are fabricated with a new record efficiency of 28.3% using the triple‐chamber HVPE system.

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Section: Introductionmentioning

confidence: 99%

28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

et al. 2021

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“…The stress in each element is obtained by solving n independent equations resulting from the equilibrium condition (the summation of average in-plane force in all individual elements is zero) [18,19,20]:…”

Section: Residual Stress Modellingmentioning

confidence: 99%

Modelling of Thermal Residual Stresses in Ceramic Coatings with a Graded Composite Interlayer

Teixeira

Andritschky

Stöver

1998

Advanced Multilayered and Fibre-Reinforced Composites

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Abstract. The present contribution involves numerical modelling of the residual stress distribution within a multilayered coating system which consists of a functionally gradient material (FGM). The structure of the graded system is made of a ceramic layer and a metallic layer, where between them there is an interlayer which is a graded composite made of the metal and ceramic. The composition changes gradually from 0% ceramic to 100% ceramic. This graded composite interlayer was modelled as a serie of perfectly bonded finite thin layers, each having slightly different material properties. We analyse the FGM design with respect to thermal stress optimization (e.g. reduction of the interfacial stresses). The case of a bilayer, thick ceramic coating on a metallic substrate and a graded thermal barrier coating (TBC) is considered. The effects on thermal residual stress gradients of the compositional profiles and graded interlayer thickness were studied. This FGM stress model enables us to calculate the thermal strain and stress distributions, which contributes to a better understanding of the failure of a graded coating system and is, therefore, a potential tool for FGM stress optimization to improve the thermo-mechanical stability of multilayer graded structures such as high temperature ceramic coatings for use in thermal barrier applications.

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“…An efficiency of 22 percent has been achieved in such devices (13). Other approaches that have been effective in reducing front-surface recombination and improving cell efficiency include the use of metal-insulator-semiconductor structures (14), AlAs/p-GaAs (15) heterojunctions, shallow homojunctions (16), and heterostructures where InGaP (17) replaces GaAlAs.…”

Section: Gallium Arsenidementioning

confidence: 99%

Photovoltaic Materials

Perez-Albuerne

Tyan

1980

Science

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Solid-state photovoltaic cells are feasible devices for converting solar energy directly to electricity. Recent cost reductions have spurred an incipient industry, but further advances in materials science and technology are needed before photovoltaic cells can compete with other sources for the supply of large amounts of energy. In this article energy loss mechanisms in solid-state photovoltaic cells are examined and related to materials properties. Various systems under development are reviewed which illustrate some key concepts, opportunities, and problems of this most promising emerging technology. Areas where contributions from innovative materials research would have a significant effect are also indicated.

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Vapor-grown InGaP/GaAs solar cells

Cited by 36 publications

References 6 publications

28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

Modelling of Thermal Residual Stresses in Ceramic Coatings with a Graded Composite Interlayer

Photovoltaic Materials

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