Vapor growth and interfacial carrier dynamics of high-quality CdS-CdSSe-CdS axial nanowire heterostructures

Zhang, Qinglin; Liu, Huawei; Guo, Pengfei; Li, Dan; Fan, Peng; Zheng, Weihao; Zhu, Xiaoli; Jiang, Ying; Zhou, Hong; Hu, Wei; Zhuang, Xiujuan; Liu, Hongjun; Duan, Xiangfeng; Pan, Anlian

doi:10.1016/j.nanoen.2016.12.014

Cited by 64 publications

(45 citation statements)

References 43 publications

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“…One-dimensional (1-D) semiconductor nanostructures have been attracting a great deal of attention due to their excellent electronic and optoelectronic performance [1][2][3][4][5]. Many high efficiency device applications were achieved based on building blocks of semiconductor nanostructures, such as photodetectors, solar cells, laser diodes, field-effect transistors, etc.…”

Section: Introductionmentioning

confidence: 99%

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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Abstract:Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

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“…In contrast with the above artificially integrated structures, an axial heterostructure nanowire accommodated by two or more gain media can be used to realize multicolor laser structure in one nanostructure. For the material sources of CdS and CdSe, when they are quickly replaced rather than slowly moved across the heating zone of the furnace, a sudden composition change of the deposition material can be achieved . Furthermore, maintaining a sufficiently isolation time between the growth of two material segments to evacuate the residual previous source vapor in the growth zone.…”

Section: Gain Medium and Structures Of Multicolor Lasersmentioning

confidence: 99%

“…Due to the two emission bands of the NW heterostructures, dual color lasing at 597.9 and 516.4 nm on a single nanowire was achieved when the pumping fluency was increased to ≈80 µJ cm −2 (Figure b,c). The FWHM of the lasing mode is about 0.4 nm …”

Section: Gain Medium and Structures Of Multicolor Lasersmentioning

confidence: 99%

Section: Gain Medium and Structures Of Multicolor Lasersmentioning

confidence: 99%

“…If higher feedback is needed to further decrease the lasing threshold of a nanostructure, artificially manufactured cavity can also be used. The artificially constructed optical cavities, such as distributed feedback (DFB) and distributed Bragg‐reflector (DBR) cavities, not only can provide sufficient optical feedback to decrease the lasing threshold but also can improve the directionality of the laser …”

Section: Introductionmentioning

confidence: 99%

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Multicolor Semiconductor Lasers

Zhuang

Ouyang

Wang

et al. 2019

Advanced Optical Materials

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Figure 1. a) Normalized absorption (dashed line) and PL (solid line) spectra of diluted green (green curves) and blue (blue curves) emitting CQD solutions. b,c) HRTEM images of a single green and blue emitting CQD, respectively. The scale bar of both (b) and (c) is 5 nm. d) Schematic diagram of the nonradiative resonant energy transfer from blue quantum dots to the green quantum dots. e,f) Emission spectral evolution for mixed blue and green emitting CQDs in the capillary tube with the mass ratio of blue to green emitting CQDs of (e) 1:1 and (f) 3:1. Reproduced with permission. [59]

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Epitaxial Growth of 2D Bi₂O₂Se Nanoplates/1D CsPbBr₃ Nanowires Mixed‐Dimensional Heterostructures with Enhanced Optoelectronic Properties

Fan

Dai

Liang

et al. 2021

Adv Funct Materials

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The 2D/1D mixed‐dimensional van der Waals heterostructures have great potential for electronics and optoelectronics with high performance and multifunctionality. The epitaxy of 1D micro/nanowires on 2D layered materials may efficiently realize the large‐scale preparation of 2D/1D heterostructures, which is critically important for their practical applications. So far, however, only the wires of Bi2S3, Te, and Sb2Se3 have been epitaxially grown on MoS2 or WS2. Here, it is reported that the epitaxial growth of 1D CsPbBr3 nanowires on 2D Bi2O2Se nanoplates through a facile vertical vapor deposition method. The CsPbBr3 wires are well aligned on the Bi2O2Se plates in fourfold symmetry with the epitaxial relationships of [001]CsPbBr3||[200]Bi2O2Se and [1‐10]CsPbBr3||[020]Bi2O2Se. The photoluminescence results reveal that the emission from CsPbBr3 is significantly quenched in the heterostructure, which implies the charge carriers transfer from CsPbBr3 to Bi2O2Se. The waveguide characterization shows that the epitaxial CsPbBr3 wires may efficiently confine and guide their emission, which favors the light absorption of Bi2O2Se. Importantly, the photocurrent mapping and spectra of the devices based on these 2D/1D heterostructures prove that the epitaxial CsPbBr3 wires remarkably enhances the photoresponse of Bi2O2Se, which indicates these heterostructures can be applied in high‐performance optoelectronic devices or on‐chip integrated photonic circuits.

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Vapor growth and interfacial carrier dynamics of high-quality CdS-CdSSe-CdS axial nanowire heterostructures

Cited by 64 publications

References 43 publications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Multicolor Semiconductor Lasers

Epitaxial Growth of 2D Bi₂O₂Se Nanoplates/1D CsPbBr₃ Nanowires Mixed‐Dimensional Heterostructures with Enhanced Optoelectronic Properties

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Vapor growth and interfacial carrier dynamics of high-quality CdS-CdSSe-CdS axial nanowire heterostructures

Cited by 64 publications

References 43 publications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Multicolor Semiconductor Lasers

Epitaxial Growth of 2D Bi2O2Se Nanoplates/1D CsPbBr3 Nanowires Mixed‐Dimensional Heterostructures with Enhanced Optoelectronic Properties

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Product

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Epitaxial Growth of 2D Bi₂O₂Se Nanoplates/1D CsPbBr₃ Nanowires Mixed‐Dimensional Heterostructures with Enhanced Optoelectronic Properties