Vapor Phase Deposition and Etching of Silicon

Shepherd, W.H.

doi:10.1149/1.2423357

Cited by 87 publications

(49 citation statements)

References 1 publication

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“…For this we use Eq. [2], which was found as a result of the experiments in a horizontal reactor with a nontilted susceptor. In the case of a tilted susceptor, the gas velocity is a function of x because of decreasing cross section of the free space above the susceptor…”

Section: Fig 6 Outline Of the Epitaxial Growth Equipmentmentioning

confidence: 70%

“…Thermal diffusion results in a mass transport from the susceptor to the main gas flow and this diffusion flow is to be subtracted from the diffusion flow to the susceptor caused by a concentration gradient. The diffusion coefficient of silane in hydrogen due to a concentration gradient is not known, but on the basis of molecular weight a value of Do = 0.6 cm2/s seems reasonable (2). The value of Do = 0.2 cm2/s, with which the results described in this paper can be explained, should be considered as incorporating a correction for neglected thermal diffusion and the mathematically simplified temperature dependence of D.…”

Section: Discussionmentioning

confidence: 85%

“…[1] derived from the model, log G indeed decreases linearly with x. lation between 6 and the velocity, V, is needed. A number of relationships have been tried but the relation: A 6 = --B [2] x/vT with A = 7 cm 3/2 s -1/2 and B = 0.2 cm appears to be the best compromise. Theoretically and experimentally, the growth rate, G, decreases with increasing values of the position parameter, x.…”

Section: Fig 6 Outline Of the Epitaxial Growth Equipmentmentioning

confidence: 99%

“…At low Vo, the efficiency, n, decreases with increasing Vo and flattens up to the upper limit of the range of validity of Eq. [2]. Figure 11 also gives the experimental values of ~1, measured by gas chromatographic analysis of the incoming and outgoing gas.…”

Section: Fig 6 Outline Of the Epitaxial Growth Equipmentmentioning

confidence: 99%

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A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

Eversteyn

Severin

Brekel

et al. 1970

J. Electrochem. Soc.

279

102

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Flow patterns have been made visible in a horizontal water‐cooled epitaxial reactor by injection of TiO2 particles into the gas flow. From these experiments, a stagnant layer model has been developed with which the epitaxial growth of silicon from silane can be described. In the case of a nontilted susceptor, the model predicts an appreciable nonuniformity in thickness along the susceptor, whereas a small angle of tilting of the susceptor should yield a much better uniformity in thickness (2% over a length of 22 cm). Experiments agree very well with the theoretical predictions of the model.

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Section: Fig 6 Outline Of the Epitaxial Growth Equipmentmentioning

confidence: 70%

Section: Discussionmentioning

confidence: 85%

Section: Fig 6 Outline Of the Epitaxial Growth Equipmentmentioning

confidence: 99%

Section: Fig 6 Outline Of the Epitaxial Growth Equipmentmentioning

confidence: 99%

See 2 more Smart Citations

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

Eversteyn

Severin

Brekel

et al. 1970

J. Electrochem. Soc.

279

102

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“…1, the model predicts that gas-phase decomposition of silane is extremely fast, and that the deposition rate is limited by the rate of diffusion of silicon-containing intermediate species to the surface. A number of previous theories of CVD have been applied to this "diffusionlimited" deposition regime [2][3][4][5]. However, in these theories silane was assumed not to decompose.…”

Section: Deposition Rate Comparisonsmentioning

confidence: 99%

Laser-Excited Fluorescence Detection of Si₂ During Silane CVD

Breiland

Coltrin

1983

MRS Proc.

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Using laser-excited fluorescence, Si 2 has been observed in a CVD cell during the deposition of silicon from silane. The formation of Si 2 was predicted by our numerical model for CVD which includes a detailed treatment of the chemical kinetics and fluid flow in the gas phase. Our observations of Si 2 provide strong support for this model. We also find excellent agreement between the temperature dependence of silicon deposition rates predicted by the model and experimental deposition rates from the literature. These observations indicate that gas-phase chemical reaction kinetics are more important in silane CVD than has been recognized previously.

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Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl₄ + H₂ Mixtures

Riedl¹

1972

Cryst Res and Technol

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Treatment of diffusion-controlled chemical vapour deposition (CDV) usually neglects supersaturation a t the gas-solid interface, which is the basic condition for crystal growth. A new approach based on metastable equilibria and on the concept of activit,y, taking into account departure from equilibrium has been given and applied t o the system resulting from SiCl, + H, mixtures. The control of activity a t the gassolid interface should provide a method of controlling the morphology and perfection of CVD films.Die Behandlung der diffusionsbestimmten chemischen Dampfabscheidung (CVD) vernachlassigt gewohnlich die fibersattigung der Gas-fest-Grenzflache, die die Grundbedingung fur das Kristallwachstum darstellt. Die vorliegende Betrachtung grundet sich auf das metastabile Gleichgewicht und auf die Aktivitat. indem die Abweichung vom Gleichgewicht zugrunde gelegt wird. Ein aus (SiC1, + H,)-Mischungeri hestehendes System wird untersucht. Die Beherrschung der Aktivitat der Gasfest-Grenzflache sollte eine Methode zur Regelung der Morphologie und der Perfektion dunner CVD-Schichten ermoglichen. Main steps in chemical vapour deposition (CVD)SiCI, reduction by H, is one of the most frequently used CVD-processes for epitaxial silicon (THEUERER 1960(THEUERER ,1961(THEUERER , 1964 Chemical vapour deposition on substrates or on already present crystal films occurs usually near atmospheric pressure. Excluding reactions in the gas phase, the deposition consists of the following steps:1. Transport of reactants through the gas phase t o the deposition surface. 2. Surface processes, such as adsorption (both physical and activated) of reactants, chemical reactions, nucleation, crystal growth a n d desorption of products.3. Transport of final products away from the deposition surface.Depositions, the rate of which are controlled by steps 1 and 3 or by step 2 are referred t o as "diffusion-controlled" or "kinetically-controlled", respectively.

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Vapor Phase Deposition and Etching of Silicon

Cited by 87 publications

References 1 publication

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

Laser-Excited Fluorescence Detection of Si₂ During Silane CVD

Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl₄ + H₂ Mixtures

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Vapor Phase Deposition and Etching of Silicon

Cited by 87 publications

References 1 publication

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

Laser-Excited Fluorescence Detection of Si2 During Silane CVD

Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl4 + H2 Mixtures

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Product

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Laser-Excited Fluorescence Detection of Si₂ During Silane CVD

Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl₄ + H₂ Mixtures