Vapour growth of three In2S3 modifications by iodine transport

Diehl, R.; Nitsche, R.

doi:10.1016/0022-0248(75)90067-6

Cited by 157 publications

(75 citation statements)

References 9 publications

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“…Closed-tube iodine transport of In2S 3 in an atmosphere of ASES3 or SbzS3 yielded red plate-like single crystals of 7-InzS3(As) and black ones of 7-In2Sa(Sb) (Diehl & Nitsche, 1973, 1975. For X-ray intensity data collection small single crystals in the form of flattened octahedra with well developed faces and a maximum size of about 200 /~m were selected and mounted on an Enraf-Nonius CAD-4 four-circle automatic single-THE CRYSTAL STRUCTURE OF 7-In2S3 STABILIZED BY As OR Sb crystal diffractometer with K-geometry.…”

Section: Methodsmentioning

confidence: 99%

The crystal structure of γ-In2S3 stabilized by As or Sb

Diehl¹,

Carpentier²,

Nitsche³

1976

Acta Crystallogr Sect B

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Under normal pressure indium sesquisulphide, In2S3, has a trigonal crystal structure between 754°C and its melting point at around 1090°C. This modification, proposed to be termed ),-In2S3, cannot be quenched to room temperature. Substitution of about 5 at. % of In by As or Sb stabilizes the structure at room temperature. The lattice constants of ?,-In2S3(As) are a = 3.806 (1), c = 9.044 (3) ~&, V= 113-45 A 3, c/a=2.376, those of ),-In2S3(Sb) a=3.831 (1), c=9-049 (6) A, V=l15-01 ,~3, c/a=2.362; space group P-3ml, Z= 1. X-ray intensity data have been collected on a four-circle automatic single-crystal diffractometer with Zr-filtered Mo Ke radiation. The crystal structure has been solved from a Patterson hOl projection and refined from 532 independent reflexions to R=0.056 for ?,-In2S3(As) and 518 independent reflexions to R= 0.057 for y-In2S3(Sb). The S atoms are in a cubic close-packed arrangement with all In atoms in octahedral interstices. Slabs of S-In-S-In-S are stacked along the e axis causing perfect cleavability parallel to (0001). The stabilizing atoms are tetrahedrally coordinated by S within S double-layers of adjacent slabs.

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Section: Methodsmentioning

confidence: 99%

The crystal structure of γ-In2S3 stabilized by As or Sb

Diehl¹,

Carpentier²,

Nitsche³

1976

Acta Crystallogr Sect B

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“…This result corresponds to the fact that above 650 • C the S vapour pressure above In 2 S 3 powder increases, and the compound becomes S-deficient. [8] The uniform evaporation from the pressed powder can be explained by a predominant evaporation from the outer surface of the pellets. The preferential evaporation of S from grains inside the pellets seems to be suppressed because of the high density of the pressed powder.…”

Section: Indium Sulphide Buffer Layers From Stoichiometric Powder Amentioning

confidence: 99%

Chemical characterisation of evaporated In₂S_x buffer layers in Cu(In,Ga)Se₂ thin‐film solar cells with SNMS and SIMS

Eicke

Spiering

Dresel

et al. 2008

Surface & Interface Analysis

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For the series production of Cu(In,Ga)Se 2 (CIGS)-based thin-film solar cells it is desirable to replace the thin CdS buffer layer between absorber and transparent front contact by non-toxic, low-absorbing semiconductors. In 2 S 3 , deposited by atomic layer deposition, has already been qualified as an alternative buffer material. In this work, results of indium sulphide buffer layers deposited by thermal evaporation are presented. Pressed powders with different compositions and morphology were used for evaporation at about 720 • C, resulting in different layer compositions and cell performances. The composition of the initial powder material and of the pellets after the deposition steps was determined by XRF. The deposited In 2 S x O y buffer layers and the buffer/absorber interface region were analysed by SIMS and sputtered neutral mass spectrometry (SNMS) depth profiling.Fine-grained pressed In 2 S 3 powder evaporates rather homogeneously during the entire deposition run, resulting in nearly stoichiometric In 2 S 3 layers. S and Cl are evaporated preferentially from pellets of coarse-grained, S-poor In 2 S 2.4 powder containing 2 at% Cl, leading to excess S and high Cl concentrations in the first deposited layer. The subsequent layers are S-poor and the In/S ratios continue to increase. In all interface regions additional amounts of Se, In, and Ga are detected, which could be attributed to the Cu-poor defect layer on top of the CIGS absorbers. The best solar cell performance with efficiences of about 13% was achieved with the S-rich buffer layers. Stoichiometric In 2 S 3 or S-poor layers yield lower efficiences between 8 and 11%.

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“…2,3,4,5 It is intrinsically an n-type 6,7 semiconductor with bandgap in the vicinity of 2.0 eV 1,12,15 . But there is still controversy on whether it is a direct 8,9 or indirect 10,11 bandgap material. Besides, from an environmental point of view, it is free of highly toxic heavy metals, like Cd .…”

Section: Introductionmentioning

confidence: 99%

High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition

et al. 2009

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Indium (III) sulfide has recently attracted much attention due to its potential in optical sensors as a photoconducting material and in photovoltaic applications as a wide direct bandgap material. On the other hand, optical absorption properties are key parameters in developing high photosensitivity photodetectors and high efficiency solar cells. We show that indium sulfide nanorod arrays produced by glancing angle deposition technique have superior absorption and low reflectance properties compared to conventional flat thin film counterparts. We observed an optical absorption value of approximately 96% for nanorods in contrast to 80% for conventional amorphous-to-polycrystalline thin films of indium sulfide. A photoconductivity response was also observed in the nanorod samples, whereas no measurable photoresponse was detected in conventional thin films. We give a preliminary description of the enhanced light absorption properties of the nanorods by using Shirley-George model which predicts diffusion of light by the roughness on the surface.

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Vapour growth of three In2S3 modifications by iodine transport

Cited by 157 publications

References 9 publications

The crystal structure of γ-In2S3 stabilized by As or Sb

The crystal structure of γ-In2S3 stabilized by As or Sb

Chemical characterisation of evaporated In₂S_x buffer layers in Cu(In,Ga)Se₂ thin‐film solar cells with SNMS and SIMS

High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition

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Vapour growth of three In2S3 modifications by iodine transport

Cited by 157 publications

References 9 publications

The crystal structure of γ-In2S3 stabilized by As or Sb

The crystal structure of γ-In2S3 stabilized by As or Sb

Chemical characterisation of evaporated In2Sx buffer layers in Cu(In,Ga)Se2 thin‐film solar cells with SNMS and SIMS

High Optical Absorption of Indium Sulfide Nanorod Arrays Formed by Glancing Angle Deposition

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Chemical characterisation of evaporated In₂S_x buffer layers in Cu(In,Ga)Se₂ thin‐film solar cells with SNMS and SIMS