Vapour–liquid–solid growth of one-dimensional In₂Se₃ nanostructures and their promising field emission behaviour

Abstract

Single crystalline ultra long In 2 Se 3 nanowires has been grown employing a single step facile thermal evaporation route under optimized conditions on Au/Si wafers, and morphology dependent field emission investigations on the In 2 Se 3 nanostructure at the base pressure ~1×10 -8 mbar are explored. In addition, structural and morphological analysis of as-synthesized In 2 Se 3 nanostructures has been carried out using XRD, SEM and TEM. A plausible explanation on the vapor-solid-liquid (VLS) growth mechanism based 10 on the experimental results and reported literature has been presented. Furthermore, field emission measurements demonstrate remarkably enhanced emission behaviour, which is explained on the basis of field enhancement factor and aspect ratio of the nanostructures. The synthesized In 2 Se 3 nanowires emitter delivers very high current density of ~ 1.2 mA/cm 2 at an applied electric field of ~ 6.33 V/µm. The present results demonstrate the In 2 Se 3 as an important candidate for potential applications in nano/micro-15 electronic devices.

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

“…Due to the incoming In 2 Se 3 tending to diffuse to and condense at the existing solid–liquid interface, the secondary nucleation is effectively suppressed, and no new solid–liquid interface is generated. Therefore, the existing interface is pushed forward (or backward) to form nanowires . VLS growth method can effectively control the size, position, and orientation of nanowires.…”

“…The In 2 Se 3 powder is placed upstream, the substrate coated with a thick Au film is placed downstream, and the Ar is used as the carrier gas. Reprinted with permission from ref . Copyright 2015 Royal Society of Chemistry.…”

“…Therefore, the existing interface is pushed forward (or backward) to form nanowires. 141 VLS growth method can effectively control the size, position, and orientation of nanowires. Reaction temperature, time, and pressure have a great effect on the morphologies of nanowires.…”

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

“…The layered structure of In 2 Se 3 is normally consisting of [Se-In-Se-In-Se] sheets stacked with Se atoms along the c-axis [11][12][13][14][15]. The strong intralayer bonding and weak interlayer Van der Waals interaction lead to highly anisotropic structural, electrical, optical, and mechanical properties [16,17].…”

Enhanced Field Emission Performance of MoO3 Nanorods and MoO3‐rGO Nanocomposite

“…One‐dimensional (1D) and two‐dimensional (2D) nanostructures (nanorods, nanowires, nanotubes and nanosheets) are thought to play a crucial role in next‐generation building blocks for field emitter devices, due to their fascinating physico‐chemical properties coupled with unique geometric and electronic properties . Amongst the various 1D metal oxide nanostructures; molybdenum trioxide (MoO 3 ) is one of the potential candidates owing to its characteristic optical, electronic, physical and chemical properties .…”