Variability analysis of resistive ternary content addressable memories

Bahloul, Mohamed A.; Fouda, Mohammed E.; Barraj, Imen; Masmoudi, Mohamed

doi:10.1002/cta.2919

Cited by 4 publications

(9 citation statements)

References 61 publications

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“…In Figure 3C, the memristance obtained in the experiment basically matches the memristance calculated by Equation (11), and the largest error is obtained at 163.8 ms, which can be expressed as…”

Section: Simulation and Analysissupporting

confidence: 62%

“…Since I M = 0 A and U M = 0 V, the simulation of memristance is uncertain according to Equation (12). But in fact, the memristance keeps remaining since there is no voltage across R M , which is also consistent with the change of the memristance reflected by Equation (11).…”

Section: Simulation and Analysismentioning

confidence: 57%

“…There is only one input signal VC1, which can be selected from AE5 V and 0 V. The simulation results of the memristance adjustment circuit can be seen in Figure 3. VC1ðtÞ indicates the applied voltage control signal, I M ðtÞ represents the current flowing through R M in simulation, and R M ðtÞ stands for the change of memristance that are separately gained from simulation and Equation (11). In 0-64.1 ms, VC1 ¼ À5 V, turning T1 off and T2 on, and the circuit structure is shown in Figure 2B.…”

Section: Simulation and Analysismentioning

confidence: 99%

“…[3][4][5] In addition, it also has characteristics of fast switching speed, nano-scale dimension, and low-power consumption. [6][7][8] Memristors have also been used in nonvolatile storage, [9][10][11] neuromorphic computing, 12,13 chaotic circuit, 14,15 and so on. What is more, memristor has been used to improve functional circuits such as digital and analog circuits, 16,17 digital to analog converters, 18,19 oscillators, 20,21 and filters, 22 which provides ideas to improve other traditional circuits by using memristor.…”

Section: Introductionmentioning

confidence: 99%

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Memristor‐based circuit design of continuously adjustable direct‐current voltage source

Ding

et al. 2022

Circuit Theory & Apps

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Summary Direct‐current (DC) voltage source is an essential part in many occasions such as integrated systems and laboratory electricity, which can provide a stable and continuous voltage supply. Traditional voltage sources are frequently designed by bipolar junction and field effect transistors. Compared with these devices, memristors have lower power consumption and smaller size. At present, memristors have been used in the design of logic circuits and other functional circuits, which could provide a new idea for applying memristors into the design of DC voltage sources. In this paper, a memristor‐based circuit design of continuously adjustable DC voltage source is proposed for the first time. The proposed DC voltage source circuit only consists of two modules and has a simple structure. In addition, the output voltage amplitude of this voltage source can be continuously adjusted by the application of a control signal due to the utility of the memristor. The operation process of the whole circuit and the mathematical model between the input and output are analyzed in detail, which is greatly beneficial for use and expansion. Finally, the effectiveness of the circuit is verified in PSPICE, and the accuracy of the output amplitude of the voltage source is also investigated.

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Section: Simulation and Analysissupporting

confidence: 62%

Section: Simulation and Analysismentioning

confidence: 57%

Section: Simulation and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Memristor‐based circuit design of continuously adjustable direct‐current voltage source

Ding

et al. 2022

Circuit Theory & Apps

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“…Memristor, among the new devices, is suitable for TCAM because of its compatibility with CMOS, higher search speed and area efficiency [14,20]. The authors in [21] proposed a memristor-CMOS hybrid TCAM with eight transistors and four memristors.…”

Section: Introductionmentioning

confidence: 99%

Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell

Khan

Rashid

2021

IET Circuits, Devices & Systems

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A memristor-transistor hybrid ternary content addressable memory (MTCAM) with a memristor-based ternary memory cell is proposed. New emerging devices like memristors have recently been explored to overcome the limitations of CMOS-based memory circuits. The memristor is used as a binary memory cell in these MTCAM designs to replace a CMOS-based memory cell. This proposed design used a memristor as a ternary memory cell by exploiting its variable resistance characteristics. The associated wiring is reduced almost by a factor of 2 as a ternary cell is used instead of two binary cells. Area efficiency is further enhanced as the MTCAM cell is comprised of two transistors and two memristors (2T2M). A segmentation technique of match line along with a robust write/ search operation method is presented to enhance the search speed of the proposed MTCAM. Simulation based on a mathematical model of memristor is presented and analysed using 65 nm TSMC MOS model parameters. Corner simulations and Monte Carlo simulations are carried out to substantiate the robustness of the design against process variation. Simulation results show the worst search delay of 0.75 ns and the energy/bit/search of 0.866 fJ for the 128 � 128 bit MTCAM. 1 | INTRODUCTION Large data computation requires massive parallel processing with heavy memory access traffic [1,2]. Content addressable memory (CAM), a widely used hardware search engine for high-speed parallel data search applications [3], provides the capability to search data across an entire memory and returns the address in a single clock cycle [4,5]. Ternary content addressable memory (TCAM) adds more flexibility in the search operation by providing a third state called Mask ('don't care') state. The 'X' state provides a groupsearch option, that is, searching a portion of the word when necessary instead of searching the whole word. This additional 'X' state makes TCAM more powerful in searching by returning match condition regardless of the input search data [6]. TCAM, with its high throughput, is a promising solution for systems that deal with large data, such as a high-speed search engine, data base engine, data mining and multimedia processing [7-9]. CAM density has improved significantly over the past two decades with aggressive CMOS technology scaling [10]. Aggressive scaling of CMOS technology steadily increases the power density of the chip causing a heating problem [11,12]. TCAM needs 2-bit memory to accommodate the third state, 'X'. Multiple (12-16) transistors are thus needed to form TCAM cells, which require large area and, eventually, high power consumption [4]. This area and power constraint limits the usage of CMOS-based TCAM in network and classification applications [13,14]. New emerging devices such as magnetotunnelling junction-based devices [15], metamaterials-based optical nano circuits [16], carbon nanotube field effect transistors [17] and memristors [18,19] are being explored to find solutions for these area and power limitations of their CMOS counterpart. Memristor, among...

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TCAmM^CogniGron: Energy Efficient Memristor-Based TCAM for Match-Action Processing

Saleh

Goossens

Banerjee

et al. 2022

2022 IEEE International Conference on Rebooting Computing (ICRC)

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The Internet relies heavily on programmable matchaction processors for matching network packets against locally available network rules and taking actions, such as forwarding and modification of network packets. This match-action process must be performed at high speed, i.e., commonly within one clock cycle, using a specialized memory unit called Ternary Content Addressable Memory (TCAM). Building on transistorbased CMOS designs, state-of-the-art TCAM architectures have high energy consumption and lack resilient designs for incorporating novel technologies for performing appropriate actions. In this article, we motivate the use of a novel fundamental component, the 'Memristor', for the development of TCAM architecture for match-action processing. Memristors can provide energy efficiency, non-volatility and better resource density as compared to transistors. We have proposed a novel memristorbased TCAM architecture called TCAmM CogniGron , built upon the voltage divider principle and requiring only two memristors and five transistors for storage and search operations compared to sixteen transistors in the traditional TCAM architecture. We analyzed its performance over an experimental data set of Nbdoped SrTiO 3 -based memristor. The analysis of TCAmM CogniGron showed promising power consumption statistics of 16 µW and 1 µW for match and mismatch operations along with twice the improvement in resources density as compared to the traditional architectures.

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Variability analysis of resistive ternary content addressable memories

Cited by 4 publications

References 61 publications

Memristor‐based circuit design of continuously adjustable direct‐current voltage source

Memristor‐based circuit design of continuously adjustable direct‐current voltage source

Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell

TCAmM^CogniGron: Energy Efficient Memristor-Based TCAM for Match-Action Processing

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Variability analysis of resistive ternary content addressable memories

Cited by 4 publications

References 61 publications

Memristor‐based circuit design of continuously adjustable direct‐current voltage source

Memristor‐based circuit design of continuously adjustable direct‐current voltage source

Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell

TCAmMCogniGron: Energy Efficient Memristor-Based TCAM for Match-Action Processing

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TCAmM^CogniGron: Energy Efficient Memristor-Based TCAM for Match-Action Processing