Variability Improvement by Si Surface Flattening of Electrical Characteristics in MOSFETs With High-k HfON Gate Insulator

Abstract

Variability improvement of metal-oxidesemiconductor field-effect transistors (MOSFETs) characteristics with high-k HfON gate insulator by Si surface flattening was investigated. The Si surface flattening process was carried out by Ar/4.9%H2 anneal utilizing rapid thermal annealing (RTA) system. The HfON gate insulator was formed by the in-situ Ar/O2 plasma oxidation of HfN utilizing electron cyclotron resonance (ECR) plasma sputtering followed by the post deposition anneal (PDA) at 600 o C for 1 min. The Si surface flattening was found to significantly improve the threshold voltage variability (VTH) of MOSFET with HfON gate insulator for the first time. Furthermore, the stability of the device characteristics was improved up to the measurement temperature of 100 o C by introducing the Si surface flattening process. Index Terms-ECR plasma sputtering, gate insulator, HfON, high-k, MOSFETs, Si surface flattening, variability 0894-6507 (c)

HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory

“…The Hf-based MONOS NVM was in situ formed on p-Si(100) substrate by the gate-last process. [22][23][24][25][26][27][28] After the active region formation and channel stop ion implantation, ion implantation was carried out for source and drain (S/D) regions (PH 3 , 5 × 10 15 cm −2 , 20 keV) followed by the activation annealing at 900 °C/20 min in N 2 ambient. Then, the MONOS structure was in situ deposited on p-Si(100) by electron cyclotron resonance plasma sputtering (AFTEX 3400) at room temperature (RT).…”

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

“…Conley等人 [28] [29] 研究认为高k介电材料的重离子硬击穿电压高于 超薄SiO 2 . Quinteros等人 [30] 和Singh等人 [31,32] 的实验 [37] 、三维FinFET器件 [38] 、U形沟道器件 [39] 、新 型高k栅介质器件 [40] 、非硅沟道器件 [6] 寻找新型高迁移率沟道材料以提升CMOS性能 是一个重要发展方向 [43,44] . GeSn具有很高的空穴迁 移率, 是新型纳米器件最有潜力的沟道材料之一 [45] , [45,46] , 但对其辐射效应研究国内外尚属空白.…”

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

“…We have reported various Hf-based high-k gate insulators and also in-situ formation of HfN x (x < 1:0) gate electrode on the Hf-based high-k gate insulator [10,11,12,13,14]. It was found that the in-situ formation of HfN x (x < 1:0) gate electrode improved the electrical characteristics of Hf-based high-k gate insulator [13].…”