Variability in Carbon Nanotube Transistors: Improving Device-to-Device Consistency

Franklin, Aaron D.; Tulevski, George S.; Han, Shu Jen; Shahrjerdi, Davood; Cao, Qing; Chen, Hong Yu; Wong, H.-S. Philip; Haensch, Wilfried

doi:10.1021/nn203516z

Cited by 121 publications

(112 citation statements)

References 32 publications

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“…5d). The extent of removal of s-SWNT can be minimized by eliminating any unintentional doping 55 , a capability that is likely important, in any case, for practical use of s-SWNTs in electronic circuits.…”

Section: Resultsmentioning

confidence: 99%

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

et al. 2014

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Recent progress in the field of single-walled carbon nanotubes (SWNTs) significantly enhances the potential for practical use of this remarkable class of material in advanced electronic and sensor devices. One of the most daunting challenges is in creating large-area, perfectly aligned arrays of purely semiconducting SWNTs (s-SWNTs). Here we introduce a simple, scalable, large-area scheme that achieves this goal through microwave irradiation of aligned SWNTs grown on quartz substrates. Microstrip dipole antennas of low work-function metals concentrate the microwaves and selectively couple them into only the metallic SWNTs (m-SWNTs). The result allows for complete removal of all m-SWNTs, as revealed through systematic experimental and computational studies of the process. As one demonstration of the effectiveness, implementing this method on large arrays consisting of B20,000 SWNTs completely removes all of the m-SWNTs (B7,000) to yield a purity of s-SWNTs that corresponds, quantitatively, to at least to 99.9925% and likely significantly higher.

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Section: Resultsmentioning

confidence: 99%

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

et al. 2014

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“…28,29 Quantitative FM-KPFM obtains the same information from short segments of a single device. Besides efficiency, this fact allows FM-KPFM to directly image anomalous resistances or device-specific behaviors, 30 including those which cannot be accounted for by scanned probe techniques that do not spatially resolve potential profiles. [31][32][33] Closer to the drain and source electrodes, the DV SWNT (x,V D ) curves in Fig.…”

Section: -mentioning

confidence: 99%

Quantitative Kelvin probe force microscopy of current-carrying devices

Fuller

Pan

Corso

et al. 2013

Applied Physics Letters

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Kelvin probe force microscopy (KPFM) should be a key tool for characterizing the device physics of nanoscale electronics because it can directly image electrostatic potentials. In practice, though, distant connective electrodes interfere with accurate KPFM potential measurements and compromise its applicability. A parameterized KPFM technique described here determines these influences empirically during imaging, so that accurate potential profiles can be deduced from arbitrary device geometries without additional modeling. The technique is demonstrated on current-carrying single-walled carbon nanotubes (SWNTs), directly resolving average resistances per unit length of 70 kΩ/μm in semimetallic SWNTs and 200 kΩ/μm in semiconducting SWNTs.

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“…13,14 CNT-FETs have potential for use in low-power scaled-down devices. 15 However, CNT FETs have threshold variability 16 and other limitations including:…”

Section: Scaling Of Sws-qdc-fets To 9 Nm and Integration With Cmos Bimentioning

confidence: 99%

Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic

Jain

Chan

Lingalugari

et al. 2015

Journal of Elec Materi

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Electron wavefunctions are switched spatially from one quantum well to another by varying the gate voltage V g in spatial wavefunction-switched (SWS) field-effect transistors (FETs), which comprise two or more coupled quantum wells serving as the transport channel. This is shown for Si/SiGe and InGaAs/AlInAs quantum well systems. The presence of charge in a particular well or channel is used to encode four states 00, 01, 10, 11. This unique property is used for two-bit processing, resulting in compact two-bit static random-access memory devices. Experimental data including capacitance-voltage peaks in Si and InGaAs multiple quantum well SWSFETs has verified the SWS phenomenon. Replacing quantum wells by an array of cladded quantum dots, forming a quantum dot superlattice (QDSL) layer, enhances the contrast and noise margin in SWS-FETs. This paper reports I-V and C-V characteristics for a fabricated twin-drain SWS-quantum dot channel (QDC) FET comprising four layers of self-assembled SiO x -Si quantum dots. SWS-QDC-FETs are shown to be scalable to $9 nm, and comprise four layers of cladded quantum dots with an array of 3 9 3 forming the channel.

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Variability in Carbon Nanotube Transistors: Improving Device-to-Device Consistency

Cited by 121 publications

References 32 publications

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

Quantitative Kelvin probe force microscopy of current-carrying devices

Si and InGaAs Spatial Wavefunction-Switched (SWS) FETs with II–VI Gate Insulators: An Approach to the Design and Integration of Two-Bit SRAMs and Binary CMOS Logic

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