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This paper presents silicon quantum dot channel (QDC) field effect transistors (FETs) and floating gate nonvolatile memory structures. The QDC-FET operation is explained by carrier transport in narrow mini-energy bands which are manifested in an array of SiO x -cladded silicon quantum dot layers. For nonvolatile memory structures, simulations of electron charge densities in the floating quantum dot layers are presented. Experimental threshold voltage shift in I D -V G characteristics is presented after the 'Write' cycle. The QDC-FETs and nonvolatile memory characteristics are expected to enhance due to improved threshold voltage variations by incorporating the lattice-matched II-VI layer as the gate insulator.