Variable-Gain, Variable-Transconductance, and Multiplication Techniques: A Survey

Hauser, Max W.; Klumperink, Eric A.M.; Meyer, Robert G.; Mack, W.D.

doi:10.1007/978-1-4613-1443-1_14

Cited by 4 publications

(2 citation statements)

References 90 publications

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“…2(c). Assuming the right half-plane zero due to the gate-drain capacitance is cancelled as discussed above, we find (2) where is the gate-source capacitance of M2 and the total capacitance from source to ground. The effective transconductance becomes , if , and the output impedance approximately .…”

Section: High-frequency Behaviormentioning

confidence: 99%

“…1 shows some examples of circuits exploiting a transconductor combined with passive components. Examples are well-known, Gm-C filters [1] and Gm-R variable gain amplifiers [2], but also Gm-LC filters, gyrators, negative resistance networks, controllable delay elements, and active mixers. Actually, in high-frequency circuits, most of the transistors are functionally best considered as transconductors.…”

Section: Introductionmentioning

confidence: 99%

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Systematic comparison of hf cmos transconductors

Klumperink¹,

Nauta²

2003

IEEE Trans. Circuits Syst. II

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Transconductors are commonly used as active elements in high-frequency (HF) filters, amplifiers, mixers, and oscillators. This paper reviews transconductor design by focusing on the V-I kernel that determines the key transconductor properties. Based on bandwidth considerations, simple V-I kernels with few or no internal nodes are preferred. In a systematic way, virtually all simple kernels published in literature are generated. This is done in two steps: 1) basic 3-terminal transconductors are covered and 2) then five different techniques to combine two of them in a composite V-I kernel. In order to compare transconductors in a fair way, a normalized signal-to-noise ratio (NSNR) is defined. The basic V-I kernels and the five classes of composite V-I kernels are then compared, leading to insight in the key mechanisms that affect NSNR. Symbolic equations are derived to estimate NSNR, while simulations with more advanced MOSFET models verify the results. The results show a strong tradeoff between NSNR and transconductance tuning range. Resistively generated MOSFETs render the best NSNR results and are robust for future technology developments. -Figure of merit, -filter, linearization, noise, signal to noise ratio, transconductor, transconductor-C filter, tunable filter, V-I converter, variable gain, voltage to current converter. Index Terms

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Section: High-frequency Behaviormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Systematic comparison of hf cmos transconductors

Klumperink¹,

Nauta²

2003

IEEE Trans. Circuits Syst. II

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A systematic approach to circuit design and analysis: classification of two-VCCS circuits

Klumperink

1999

IEEE Trans. Circuits Syst. I

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Abstract-This paper discusses a systematic approach to the design and analysis of circuits, using a transconductor or voltage controlled current source (VCCS) as a building block. It is shown that two independent Kirchhoff relations among the VCCS voltages and currents play a crucial role in establishing a unique transfer function in two-port circuits with two VCCS's. A class of two-VCCS circuits is defined, which can be subdivided into three main classes and 14 subclasses, based on different imposeable sets of two Kirchhoff relations. The classification is useful for circuit synthesis and analysis, as it reveals all the basically different ways to exploit two VCCS's, and allows for a unified analysis of classes of circuits. To exemplify this, all complementary metal-oxide-semiconducter (CMOS) V 0 I converter kernels, based on two matched MOS transistor (MOST)-VCCS's, are generated and analyzed with respect to distortion. It is shown that dozens of published transconductor circuits can be classified in only four classes, with essentially different distortion behavior.

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Systematic generation of transconductance based variable gain amplifier topologies

Klumperink

Tuijl²

ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187)

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A systematic method for the generation of variable gain amplifier topologies is proposed. The generation is based on voltage controlled current sources (VCCSs) modelling saturated MOS transistors, resistors or combinations of these elements. It is shown that many alternative circuit topologies can be generated, that would not easily have been found in an intuitive way. Simulation results shown that significant differences in perfornance occur, with various mixes of specific strong and weak points. The set of alternative topologies can be used as a circuit topology database for analogue CAD systems.

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Variable-Gain, Variable-Transconductance, and Multiplication Techniques: A Survey

Cited by 4 publications

References 90 publications

Systematic comparison of hf cmos transconductors

Systematic comparison of hf cmos transconductors

A systematic approach to circuit design and analysis: classification of two-VCCS circuits

Systematic generation of transconductance based variable gain amplifier topologies

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