Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes

Westlinder, Jörgen; Sjöblom, Gustaf; Olsson, Jörgen

doi:10.1016/j.mee.2004.07.061

Cited by 76 publications

(38 citation statements)

References 17 publications

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“…The gate dielectric thickness of MOSFETs with HfO 2 has been reported to scale down to 11 Å with very low leakage current even after the high temperature conventional CMOS process. Westlingder et al [331] studied nitrogen percentage dependent work functions for TiN x gate electrodes. Both high and low work functions have been obtained ($4.9 eV vs $4.2 eV) by changing the nitrogen percentages, making TiN x a very interesting material for dual-work function gate CMOS applications.…”

Section: Metal Nitride Gatesmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

136

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Section: Metal Nitride Gatesmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

136

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“…The resistivity of the TiN film followed by annealing at 350°C for 10 min in N 2 was 140 ⍀ cm, which was close to the value for stoichiometric TiN film. 6 The PMA of the TiN-deposited sample was performed at temperatures in the range of 350-550°C for 20 min in N 2 . Then, a 100-nm-thick Al film was deposited by thermal evaporation.…”

Section: Postmetallization Annealing Effect Of Tin-gate Ge Metal-oxidmentioning

confidence: 99%

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation

Nakashima

Iwamura

Sakamoto

et al. 2011

Applied Physics Letters

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The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO2/GeO2 bilayer passivation. PMA at 450 °C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from −0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2/GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6×1011 to 2.5×1011 cm−2 eV−1, as results of the nitrogen termination of defects at the SiO2/GeO2 interface and/or in the GeO2 interlayer.

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“…[17] Westlinder et al found a strong correlation between the work function of PVD TiN x and nitrogen content, whereby the work function of stoichiometric TiN should be around 5.0 eV. [18] The high work function indicates applicability of TiN as a metal gate for gate-last PMOS transistors with a thermal budget below 600 8C. [19] Full Paper The second part of this study is focused on the application of AVD TiN as the electrode material for MIM capacitors.…”

mentioning

confidence: 93%

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

Lukosius

Wenger

Pasko

et al. 2008

Chemical Vapor Deposition

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Pure and diluted Ti[N(Et) 2 ] 4 precursors are used to grow TiN layers at 400-600 -C by using atomic vapor deposition (AVD 1 ). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The determined work function of 4.7 eV indicates the possibility of using AVD 1 -grown TiN as a metal gate electrode for PMOSFET and metal-insulator-metal (MIM) devices. TiN/HfO 2 /SiO 2 stacks are integrated into gate-last PMOS transistors, and the extracted parameters are compared to poly-Si/SiO 2 reference transistors. The optimized films grown at 400 -C with a thickness of 20 nm exhibit a resistivity of 400 mV cm.

show abstract

Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes

Cited by 76 publications

References 17 publications

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate‐last CMOS and MIM Devices

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