Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates

Bassignana, I.C.; Macquistan, D.A.; Hillier, G.; Streater, R. W.; Beckett, D. J. S.; Majeed, Abdul; Miner, C. J.

doi:10.1016/s0022-0248(97)00009-2

Cited by 14 publications

(11 citation statements)

References 31 publications

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“…Boron content of less than 10 16 cm À3 in Si-doped GaAs single crystal grown by the horizontal Bridgman method has been reported. 27,28) This suggests that the presence of B 2 O 3 flux is essential for the increase of boron content in Si-doped GaAs single crystals, and confirms the validity of the mechanism related to eq. (8).…”

Section: Comparison With Reported Values Of Boron Andsupporting

confidence: 71%

“…3,7,8,10,12,[22][23][24][25][26][27][28][29][30] The maximum content of boron in undoped GaAs single crystal grown by the LEC or VGF method ranged from 1 Â silicon to a GaAs melt increased the maximum content of boron in the resulting GaAs single crystals. Boron contents ranging from 5 Â 10 17 cm À3 (1.7 mass ppm) to 1:9 Â 10 19 cm À3 (64 mass ppm) have been reported for Si-doped GaAs single crystal.…”

Section: Comparison With Reported Values Of Boron Andmentioning

confidence: 99%

“…Boron contents ranging from 5 Â 10 17 cm À3 (1.7 mass ppm) to 1:9 Â 10 19 cm À3 (64 mass ppm) have been reported for Si-doped GaAs single crystal. 23,[26][27][28][29][30] The mechanism of boron incorporation can be explained by the following reaction: 29,30) 3Siðin…”

Section: Comparison With Reported Values Of Boron Andmentioning

confidence: 99%

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Boron and Nitrogen in GaAs and InP Melts Equilibrated with B2O3 Flux

Yamada¹,

Kudo

Tajima

et al. 2004

Mater. Trans.

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The boron and nitrogen contents of GaAs and InP melts equilibrated with B 2 O 3 flux were examined at 1523 and 1373 K, respectively, using a chemical equilibrium technique. GaAs or InP was melted with B 2 O 3 flux in a silica ampoule with and without a BN crucible. The boron content decreased with increasing nitrogen content in both of the melts equilibrated with B 2 O 3 flux and BN. The solubility product of BN in the melts was expressed as a function of nitrogen content. The relationship between the boron and nitrogen contents of a GaAs melt coexisted with BN agreed well with that in the residue after LEC crystal growth of GaAs. The boron content of the GaAs melt coexisted with silica was much larger than that of the GaAs melt with BN. It was suggested that the reduction of B 2 O 3 by silicon introduced into the melt from silica led the increase of boron content.

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Section: Comparison With Reported Values Of Boron Andsupporting

confidence: 71%

Section: Comparison With Reported Values Of Boron Andmentioning

confidence: 99%

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Boron and Nitrogen in GaAs and InP Melts Equilibrated with B2O3 Flux

Yamada¹,

Kudo

Tajima

et al. 2004

Mater. Trans.

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“…The latter might be generated by different silicon and boron concentrations in seed and melt. Both dopants strongly influence the lattice constant [13,37].…”

Section: Discusssion Of Other Dislocation Behaviour At the Seeding Inmentioning

confidence: 99%

Investigation of residual dislocations in VGF-grown Si-doped GaAs

Birkmann

Stenzenberger

Jurisch

et al. 2005

Journal of Crystal Growth

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“…Due to the exchange reaction 2B 2 O 3 þ 3Si # 3SiO 2 þ 4B, silicon added to the melt will be partly incorporated into boron oxide, whereas boron pollutes the melt [158]. The boron content of the crystals usually increases with the Si concentration and is slightly higher than the latter [159][160][161]. Boron is mainly substituted isoelectrically for the gallium site, but at higher concentrations it also occupies arsenic sites, which gives a double acceptor.…”

Section: Doping and Segregationmentioning

confidence: 99%