Variation of Contact Resistance of Metal-GaAs Contacts with Impurity Concentration and Its Device Implication

Klohn, Kenneth L.; Wandinger, L.

doi:10.1149/1.2411927

Cited by 35 publications

(4 citation statements)

References 10 publications

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“…The usual technique utilizes the alloying of a Au-Ge contact mixture into the GaAs surface (18)(19)(20)(21)(22). The Ge is believed to move into the GaAs surface thereby creating a highly doped region which forms a thin space charge layer through which electrons can tunnel.…”

Section: Purpose and Motivation For This Researchmentioning

confidence: 99%

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Electron Device Contact Studies.

Wigen¹,

Thurston²

1982

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Section: Purpose and Motivation For This Researchmentioning

confidence: 99%

“…with the coefficients b and P01 defined as: 18) h p where p = -p 2 lagain since within the barrier region p 2 < 0). Since terms above Pi L will not be used, K need not be given.…”

Section: Fxmentioning

confidence: 99%

Electron Device Contact Studies.

Wigen¹,

Thurston²

1982

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“…The determination of contaet resistance eonaists, in fact, in separating the resistance of the bulk (which may be of homogeneous of layered structure) and contact resistance from the total resistanee measured. The contaet resistance can be determined by measuring the resistance between contacts of various geometrical shapes prepared on the bulk material [1,2], of by measuring the potential distribution [3]. However, these methods ate inaccurate, the accuracy is spoiled by inhomogeneities of contact and bulk [4].…”

Section: ] Introductionmentioning

confidence: 99%

“…These methods demand data either from independent measurements on the specimen [6,8,11,14], or from another specimen [9,10], ora measuring sample of special geometry [1,2,3,5,7,12], or require knowledge of band structural properties [13]. The conductivities ate generally obtained with a given specimen, but by ah independent measurement, while data resulting from ah independent specimen are generally mobilities measured on ah accompanying slice grown on semi-insulating substrate.…”

Section: ] Introductionmentioning

confidence: 99%

Electrical modelling of ohmic contacts formation on metal-n-GaAs systems

Mojzes

1980

Acta Physica

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The contaet resistance and quality can be determined by various methods. A common disadvantage of these methods is to investigate the contact after its formation occasionally by meaus of a special measuring sample. In the present work a new method for the in situ investigation of the metal--semiconductor contact is proposed. This method was used for the control of the teehnology of the metal--semiconductor ohmic contacts for high power Gunn diodes. A numerical analysis for the GaAs-AuGeeu t system was ,nade based on the electrical modelling of the eontact formation. ]. IntroductionThe investigation of metal--semiconductor eontaets is a very important task from both the practical and theoretical point of view. The modern, often eompound-semiconductor based, semiconductor devices operating with high eurrent densities raise new demands for both the properties of contaet and contacting technology.One important feature of contacts is their resistivity, and for its measurement several methods have been designed to match the given basic material, layer structure (bulk crystal of a multi-layer epitaxial structure on eondueting of semi-insulating substrate) and measurement aecuracy.Contact assessing methods usabIe in technologieal research should comply with the following requirements:1. It is to be carried out on the device of specimen to be measured, i.e. no separate test piece should be needed.2. Its realization should be simple and rapid. 3. The accuracy of measurement should be high. 4. Measurement data should permit to draw conclusions on the effeet of factors influencing coutact properties. The determination of contaet resistance eonaists, in fact, in separating the resistance of the bulk (which may be of homogeneous of layered structure) and contact resistance from the total resistanee measured.

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The wet corrosion of molybdenum thin film –. Part I: Behavior at 25°C

Tomachuk

Rosa

Špringer

et al. 2004

Materials & Corrosion

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The corrosion and passivation behaviour of molybdenum thin films obtained by Physical Vapor Deposition (PVD) was investigated in aerated chloride and sulfate solutions at different pH values. Open circuit potential (ocp) measurements, polarisation experiments and electrochemical impedance spectroscopy (EIS) were employed. The experimental results suggest that the metal surface is covered by a passive film; however, corrosion still occurs. For the samples assessed during the current research, the acidic electrolytes tended to be less corrosive; however, a limited passive region was associated with the most basic sulfate or chloride solution. The effect of the pH was found to be more pronounced than the effect of the ion (chloride or sulfate).

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Variation of Contact Resistance of Metal-GaAs Contacts with Impurity Concentration and Its Device Implication

Cited by 35 publications

References 10 publications

Electron Device Contact Studies.

Electron Device Contact Studies.

Electrical modelling of ohmic contacts formation on metal-n-GaAs systems

The wet corrosion of molybdenum thin film –. Part I: Behavior at 25°C

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