Variation of microstructure and transport properties with filament temperature of HWCVD prepared silicon thin films

Gogoi, Purabi; Jha, Himanshu S.; Agarwal, Pramod

doi:10.1016/j.tsf.2011.01.316

Cited by 6 publications

(4 citation statements)

References 14 publications

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“…The calculated value of β crystallite size was found ~ 5 nm. These results are in consistent with the nc-Si:H films prepared by hot wire method at different filament 32 temperatures by Gogoi et al…”

Section: Low Angle Xrd Analysissupporting

confidence: 92%

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Jadkar¹,

Pawbake²,

Jadhavar³

et al. 2019

ES Mater.Manuf.

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In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon (nc-Si:H) thin films by hot wire method. The obtained thin films were characterized by using low angle-XRD, Raman spectroscopy, non-contact atomic force microscopy (NC-AFM) and UV-Visible spectroscopy. The low angle-XRD analysis revealed that the obtained nc-Si:H thin films are polycrystalline and have preferred orientation along (111) direction. Formation of nc-Si:H films are further confirmed by Raman spectroscopy analysis. The UV-Visible spectroscopy analysis showed that the synthesized films have sharp absorption edge in visible region and has direct band gap of 1. 94 eV. Finally, nc-Si:H based photo-detector have been prepared at optimized process parameters which show an excellent response time (1.79 s) and -8 4 -6 recovery time (1.71 s) along with responsivity ( 9.8x10 A/W), detectivity ( 5.5x10 Jones) and quantum efficiency ( 27.37x10 %). The obtained results demonstrate a significant step towards nc-Si:H based photo-detector for broadband photo-detection applications.

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Section: Low Angle Xrd Analysissupporting

confidence: 92%

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Jadkar¹,

Pawbake²,

Jadhavar³

et al. 2019

ES Mater.Manuf.

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“…This result is contrary to the general observation during the typical HWCVD process. In general, the deposition rate of Si films is increased with increasing wire temperature in the HWCVD process (Heintze et al 1996;Gogoi et al 2011) because the decomposition efficiency of the reactants increases with increasing wire temperature. Such a difference in the dependence of the wire temperature on deposition is believed to come from the difference in the reactor pressure; the working pressure is less than 0.5 torr in the general HWCVD process whereas it is 1.5 torr in the current experiment.…”

Section: Resultsmentioning

confidence: 99%

In-SituMeasurements of Charged Nanoparticles Generated During Hot Wire Chemical Vapor Deposition of Silicon Using Particle Beam Mass Spectrometer

Hong

Kim

Yoo

et al. 2013

Aerosol Science and Technology

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It has been experimentally confirmed in many chemical vapor deposition (CVD) processes that charged nanoparticles tend to be generated in the gas phase. In an effort to confirm and measure charged gas phase nuclei, that might be generated during the deposition of Si thin films by hot wire CVD, we performed an in-situ measurement using particle beam mass spectrometer (PBMS), which can measure a size distribution of nanoparticles at low pressure. The size distribution of positively and negatively charged Si gas phase nuclei generated during hot wire CVD under 1.5 torr could be firstly measured. The particle diameter at the peak of the size distribution is about 10 ∼ 13 nm. At a wire temperature of 1800• C, the number concentration of negatively charged Si nanoparticles was higher than that of positively charged ones. The size and number concentration of charged nanoparticles decreased with increasing wire temperature from 1800 to 2000• C and increased with increasing SiH 4 concentration from 3 to 6%.

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“…These radicals may further undergo chain gas phase reactions and get modified before getting deposited at the substrate. This method has advantageous over conventional PE-CVD method in several ways; (i) absence of plasma assisted process leads to less lightinduced degradation in the HWCVD films [12,13] (ii) lack of ion bombardment on the growing film surface which is responsible for creation of defects in the films and thus deterioration of device performance [14]; (iii) high deposition rates [15] by the process of efficient catalytic cracking of the feed gases into film forming radicals; (iv) feed stock gases are utilized much more efficiently, thus reducing the processing cost further [16]; (v) films made by this method have less stress than those made by PE-CVD method [17]; (vi) films grown using this method have improved stability against the light-induced degradation [18]; (vii) both a-Si:H and μc/nc-Si:H films can be prepared at low substrate temperature [19,20] without losing the material quality. This opens up the possibility of using low cost and flexible substrates like plastics.…”

Section: Introductionmentioning

confidence: 99%

Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

Waman

Funde

Kamble

et al. 2011

Journal of Nanotechnology

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Hydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200∘C) without hydrogen dilution of silane (SiH4). A variety of techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, atomic force microscopy (AFM), and UV-visible (UV-Vis) spectroscopy, were used to characterize these films for structural and optical properties. Films are grown at reasonably high deposition rates (>15 Å/s), which are very much appreciated for the fabrication of cost effective devices. Different crystalline fractions (from 2.5% to 63%) and crystallite size (3.6–6.0 nm) can be achieved by controlling the process pressure. It is observed that with increase in process pressure, the hydrogen bonding in the films shifts from Si–H to Si–H2and(Si–H2)ncomplexes. The band gaps of the films are found in the range 1.83–2.11 eV, whereas the hydrogen content remains <9 at.% over the entire range of process pressure studied. The ease of depositing films with tunable band gap is useful for fabrication of tandem solar cells. A correlation between structural and optical properties has been found and discussed in detail.

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Variation of microstructure and transport properties with filament temperature of HWCVD prepared silicon thin films

Cited by 6 publications

References 14 publications

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

In-SituMeasurements of Charged Nanoparticles Generated During Hot Wire Chemical Vapor Deposition of Silicon Using Particle Beam Mass Spectrometer

Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

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