Variation of the morphology of electrodeposited copper thiocyanate films

Selk, Yvonne; Yoshida, Tsukasa; Oekermann, Torsten

doi:10.1016/j.tsf.2007.12.029

Cited by 23 publications

(13 citation statements)

References 13 publications

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“…In addition to the aforementioned research on p-n heterojunctions, numerous other studies succeeded in using electrochemical deposition methods to produce CuSCN HTLs [73][74][75][76][77]. Paunovic and…”

Section: Electrochemical Depositionmentioning

confidence: 99%

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Wijeyasinghe

Anthopoulos

2015

Semicond. Sci. Technol.

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Recent advances in large-area optoelectronics research have demonstrated the tremendous potential of copper(I) thiocyanate (CuSCN) as a universal hole-transport interlayer material for numerous applications, including, transparent thin-film transistors, high-efficiency organic and hybrid organicinorganic photovoltaic cells, and organic light-emitting diodes (OLEDs). CuSCN combines intrinsic hole-transport (p-type) characteristics with a large bandgap (>3.5 eV) which facilitates optical transparency across the visible to near infrared part of the electromagnetic spectrum. Furthermore, CuSCN is readily available from commercial sources while it is inexpensive and can be processed at low-temperatures using solution-based techniques. This unique combination of desirable characteristics makes CuSCN a promising material for application in emerging large-area optoelectronics. In this review article, we outline some important properties of CuSCN and examine its use in the fabrication of potentially low-cost optoelectronic devices. The merits of using CuSCN in numerous emerging applications as an alternative to conventional hole-transport materials are also discussed.

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Section: Electrochemical Depositionmentioning

confidence: 99%

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Wijeyasinghe

Anthopoulos

2015

Semicond. Sci. Technol.

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“…Various solution-processing methods can be utilized to deposit CuSCN at low temperatures, including spin-coating, 11 , 20 , 25 ink-jet printing, 26 , 27 doctor blading, 28 , 29 and electrochemical deposition. 30 − 32 These advantages enable the growth of CuSCN films with thicknesses in the range from 10 to several 100 s of nanometers, which facilitates the application of CuSCN in p-channel thin-film transistors (p-TFTs). 33 , 34 Solvents, such as diethyl sulfide (DES) and dipropyl sulfide, are commonly used to dissolve CuSCN.…”

Section: Introductionmentioning

confidence: 99%

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Liang

Firdaus

Kang

et al. 2022

ACS Appl. Mater. Interfaces

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Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10 18 cm –3 . The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at −1 V, and an external quantum efficiency of 5.14 × 10 2 % under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.

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“…Crystalline thin films of CuSCN can be deposited by a variety of methods such as dip-, and spray-coating or doctor-blading of commercial CuSCN organic solutions [14,15], successive ionic adsorption and reaction [16,17], chemical bath deposition [16], and electrochemical deposition [1,[18][19][20][21][22][23]. Recently, one-dimensional nanostructured semiconductors have attracted great attention due to their high surface areas, good charge transport properties, and special light-trapping effect.…”

Section: Introductionmentioning

confidence: 99%

Bath temperature and deposition potential dependences of CuSCN nanorod arrays prepared by electrochemical deposition

Gan

Liu

et al. 2015

J Mater Sci

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In this study, we report on the electrodeposition of p-type semiconductor copper thiocyanate (CuSCN) nanorods on ITO substrate from an aqueous solution. The influence of the bath temperature and deposition potential on the properties of CuSCN layers was studied. Nanorods deposited at low temperature (25°C) exhibited better crystalline quality and orientation along the c-axis than the nanorods grown at elevated temperatures. The deposition potential turned out to influence strongly the crystallographic orientation, the morphology, as well as the optical properties of the product. Mott-Schottky measurement demonstrates that the CuSCN nanorods are p-type semiconductor, with a hole concentration (N A ) eight times larger than that of the 2D thin films when the cylindrical geometry of the nanorods was taken into consideration. The CuSCN nanorods obtained in this study can be used as inexpensive inorganic hole-transporting material in solar energy application and it offers new possibilities to fabricate nanostructured solar cells in reversed process, which starts from the formation of nanostructured p-type electrode.

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Variation of the morphology of electrodeposited copper thiocyanate films

Cited by 23 publications

References 13 publications

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Copper(I) thiocyanate (CuSCN) as a hole-transport material for large-area opto/electronics

Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors

Bath temperature and deposition potential dependences of CuSCN nanorod arrays prepared by electrochemical deposition

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