Variational studies of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="italic">D</mml:mi></mml:mrow><mml:mrow><mml:mn>0</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="italic">D</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">−</mml:mi></mml:mrow></mml:msup></mml:mrow></mml:math>centers in ma

Blinowski, J.; Szwacka, T.

doi:10.1103/physrevb.49.10231

Cited by 18 publications

(10 citation statements)

References 36 publications

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“…Such a dependence is in accordance with the results obtained in Ref. [1]. The apparent linearity of the curves is due to the fact that at the highest field we consider (B=16 T) the ratio γ2Ry * is only 0.74.…”

Section: Resultssupporting

confidence: 92%

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Binding energy of shallow donors in a quantum well in the presence of a tilted magnetic field

Redlinski

Jankó

2005

Phys. Rev. B

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We present results of variational calculations of the binding energy of a neutral donor in a quantum well (QW) in the presence of a magnetic field tilted relative to the QW plane. Assuming that the donor is located in the center of the QW, we perform calculations for parameters typical of a II-VI wide-gap semiconductor heterostructure, using as an example the case of a rectangular CdTe quantum well with CdMgTe barriers. We present the dependence of the binding energy of a neutral donor on the tilt angle and on the magnitude of the applied magnetic filed. As a key result, we show that measurement of the binding energy of a donor at two angles of the magnetic field with respect to the quantum well plane can be used to unambiguously determined the conduction band offset of the materials building up heterostructure.

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Section: Resultssupporting

confidence: 92%

“…Note that, Gaussian trial wave functions have been successfully used in Ref. [1,10] for calculating donor and trion states, respectively. The nonlinear variational parameter α (the scaling parameter), and the linear variational parameters C ± ijk were determined using the Ritz variational method.…”

Section: Modelmentioning

confidence: 99%

Binding energy of shallow donors in a quantum well in the presence of a tilted magnetic field

Redlinski

Jankó

2005

Phys. Rev. B

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“…In the nineties several authors [21][22][23][24] improved the accuracy of the binding energies and total energies by new techniques. Vincke and Baye [21] report total ionization energies for the lowest singlet and triplet states with M = 0, −1 and −2 for a few field strengths in the regime γ = 4 − 400.…”

Section: Introductionmentioning

confidence: 99%

Ground and excited states of the hydrogen negative ion in strong magnetic fields

Al-Hujaj

Schmelcher

2000

Phys. Rev. A

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The lowest bound states of the hydrogen negative ion and negative donor systems in a homogeneous magnetic field are investigated theoretically via a full configuration-interaction approach with an anisotropic Gaussian basis set. The broad magnetic field regime ␥ϭ8ϫ10 Ϫ4 Ϫ4ϫ10 3 is covered. Nonrelativistic total energies, electron detachment energies, and transition wavelengths are presented assuming an infinite nuclear mass. The binding mechanisms are discussed in detail. The accuracy for the energies is enhanced significantly compared to previously published data.

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“…The parabolic term in (4.3) increases the electron±electron correlation for large distances between the electrons, and decreases it for small electron±electron distances as compared to the Chandrasekhar [19] linear correlation. A trial function similar to (4.3) was considered by other authors [22,23] in the cases of a D ± state in a bulk semiconductor and in a QW with n 1.…”

Section: à Impurity In a Rectangular Confining Potentialmentioning

confidence: 99%

Effects of a Diffuse Potential on Shallow-Donor States in GaAs-(Ga,Al)As Quantum Dots

Betancur

Mikhailov

Sierra

1998

phys. stat. sol. (b)

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The energies for the ground and excited states of a D 0 impurity located at the center of a GaAs/ Ga 1Àx Al x As spherical quantum dot are calculated, in the effective-mass approximation, as functions of the dot radius R and spatial size. We use a variational procedure and take linear combinations of Gaussian and Slater orbitals for the impurity-envelope wave functions. A model barrier potential is proposed to study changes in the potential introduced by diffusion effects. The binding energy of a 1s 2 -like D À impurity is also studied by considering a parabolic correlation factor. It is found that the D 0 and D À binding energies increase as the dot size decreases up to a critical dot radius R R c and then, for R slightly smaller than R c , the impurity wave function spreads to the barrier region and the 3D character is rapidly restored. The critical dot radius R R c is estimated by using the uncertainty relations.

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Variational studies ofD0andD−centers in ma

Cited by 18 publications

References 36 publications

Binding energy of shallow donors in a quantum well in the presence of a tilted magnetic field

Binding energy of shallow donors in a quantum well in the presence of a tilted magnetic field

Ground and excited states of the hydrogen negative ion in strong magnetic fields

Effects of a Diffuse Potential on Shallow-Donor States in GaAs-(Ga,Al)As Quantum Dots

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