Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

Santi, Carlo De; Meneghini, Matteo; Carraro, S.; Vaccari, Simone; Trivellin, Nicola; Marconi, Stefano; Marioli, Michael Simone; Meneghesso, G.; Zanoni, Enrico

doi:10.1016/j.microrel.2013.07.053

Cited by 9 publications

(1 citation statement)

References 19 publications

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“…8,[19][20][21][22] Its value was chosen in order to minimize second-order effects that can be present in devices submitted to thermal storages such as the variation of the series resistance, 23 the degradation of the ohmic contact, 24 possible changes in the composition of the quantum wells, 25,26 problems related to the passivation, 27 and the activation of the p-type dopant. [28][29][30] All these mechanisms concur with the annealing of the irradiation-generated defects at high temperature, and can lead to an erroneous identification of the physical cause responsible for the variation of the characteristics during the recovery tests.…”

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confidence: 99%

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Santi

Meneghini

Trivellin

et al. 2014

Applied Physics Letters

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This paper reports on the degradation and recovery of two different series of commercially available InGaN-based blue light emitting diodes submitted to proton irradiation at 3 MeV and various fluences (10 11 , 10 13 , and 10 14 p þ /cm 2 ). After irradiation, we detected (i) an increase in the series resistance, in the sub-turn-on current and in the ideality factor, (ii) a spatially uniform drop of the output optical power, proportional to fluence, and (iii) a reduction of the capacitance of the devices. These results suggest that irradiation induced the generation of non-radiative recombination centers near the active region. This hypothesis is further confirmed by the results of the recovery tests carried out at low temperature (150 C). V C 2014 AIP Publishing LLC.

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confidence: 99%

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Santi

Meneghini

Trivellin

et al. 2014

Applied Physics Letters

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Physics and Technology of AlGaInN‐Based Laser Diode

Schwarz

2021

Digital Encyclopedia of Applied Physics

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Laser diodes in the green, blue, violet, and ultraviolet spectral range are made from the binary compound semiconductors AlN, GaN, and InN and their ternary and quaternary mixed crystals. The fundamental properties of these AlGaInN laser diodes are introduced. These are double‐heterostructure laser diodes with separate confinement of electrons and holes in quantum wells and photons in an optical waveguide. A rate equation description of the static and temporal behaviors of optical output power and carrier density is introduced, as are substrates, crystal growth, and microtechnology processing methods. The routes toward longer wavelength in the green spectral region, shorter wavelength ultraviolet lasing, and higher power operation in broad‐area laser diodes are discussed. Several different realized laser designs, including vertical‐cavity surface‐emitting lasers (VCSELs), multi‐section short‐pulse lasers, and distributed Bragg reflector (DBR) lasers are introduced. The family of AlGaInN laser diodes constitutes a large variety of applications, as outlined at the end of the article.

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High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

Zhang,

Zeng,

Kang

et al. 2024

Advanced Photonics Research

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Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates the degradation factors of 437 nm and 6.3 W LDs by comparing light–current–voltage (L–I–V) characteristics, transmission electron microscopy (TEM), cathodoluminescence (CL), and secondary ion mass spectroscopy (SIMS) before and after 1000‐h aging. The diffusion of mirror coating from the resonant cavity surface is identified as a key factor contributing to high‐power LD degradation, which has not been reported in milliwatt‐level LDs. Meanwhile, the mechanisms behind the LD degradation are profiled and summarized together with the diffusion and other factors. On basis of the mechanism exploration, an anti‐aging technology for high‐power GaN‐based LDs is developed by using aluminum nitride for passivation layer and sapphire materials for mirror film. This anti‐aging technology has been verified, and a nearly ten‐time degradation suppression is achieved from 1000 h. This study elucidates the degradation mechanisms of high‐power GaN LDs and provides an effective technology to extend their lifespan, thereby prompting the practical applications of high‐power LDs.

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Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes

Cited by 9 publications

References 19 publications

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation

Physics and Technology of AlGaInN‐Based Laser Diode

High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

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