2008
DOI: 10.1109/tsm.2007.913186
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VARIUS: A Model of Process Variation and Resulting Timing Errors for Microarchitects

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Cited by 327 publications
(221 citation statements)
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“…Mesh buffers were simulated using Predictive Technology Model (45 nm PTM HP from [10]). Threshold voltage V th and channel length L eff are the two key device parameters that are subject to variation in DSM technology ( [15]). So we consider only these two variations to incorporate the process variations.…”
Section: Short Circuit (Sc)mentioning
confidence: 99%
“…Mesh buffers were simulated using Predictive Technology Model (45 nm PTM HP from [10]). Threshold voltage V th and channel length L eff are the two key device parameters that are subject to variation in DSM technology ( [15]). So we consider only these two variations to incorporate the process variations.…”
Section: Short Circuit (Sc)mentioning
confidence: 99%
“…Process variation (PV) in IC manufacturing is the deviation of IC parameter values from nominal specifications, due to the nature of the manufacturing process [6][11] [14] It is observed that PV is caused by the inability to precisely control the fabrication process at small-feature technologies [35]. For example, the lithographic lens aberrations result in systematic errors on transistor sizes, and dopant density fluctuations impose random variations on design parameters.…”
Section: Process Variationmentioning
confidence: 99%
“…There are two parameters that are directly impacted by PV: effective channel length (L) and threshold voltage (V th ) [25]. For V th , we adopt the Gaussian distribution proposed by Asenov et al [26].…”
Section: Preliminaries a Gate Delay Power And Process Variationmentioning
confidence: 99%