2011
DOI: 10.1016/j.jcrysgro.2010.11.103
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VCSELs with monolithically integrated photodiodes for single-fiber bidirectional data transmission in the Gbit/s range

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Cited by 5 publications
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“…A monolithic integration of PIN photodiodes with VCSELs was realized by growing the PD layers on top of the VCSEL structure in the same growth run. This guarantees an improved crystal quality compared to an overgrowth process [23]. Hence, the PIN PD layer stack is grown on top of the intrinsic Al 0.9 Ga 0.1 As etch stop layer, which also partially acts as an insulator, reducing the capacitive coupling between the two devices.…”
Section: Pin Photodiodementioning
confidence: 99%
“…A monolithic integration of PIN photodiodes with VCSELs was realized by growing the PD layers on top of the VCSEL structure in the same growth run. This guarantees an improved crystal quality compared to an overgrowth process [23]. Hence, the PIN PD layer stack is grown on top of the intrinsic Al 0.9 Ga 0.1 As etch stop layer, which also partially acts as an insulator, reducing the capacitive coupling between the two devices.…”
Section: Pin Photodiodementioning
confidence: 99%