Velocity/field characteristic of
            <i>n</i>
            -type indium phosphide at 110 and 330 K

Tebbenham, R.L.; Walsh, D.

doi:10.1049/el:19750073

Cited by 10 publications

(3 citation statements)

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“…10> 88~91 The v-E characteristics of n-InP have also been studied experimentally by many authors. 92 100 These results suggest that the peak velocity occurs at the electric field E ~ 11 kV/cm. However, remarkable differences in the peak velocities exist among these experimental results.…”

Section: (A) Electronsmentioning

confidence: 74%

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Carrier Transport Properties

1992

Physical Properties of III‐V Semiconductor Compounds

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Section: (A) Electronsmentioning

confidence: 74%

“…"100 The techniques used were spacecharge-wave measurements,92 microwave measurements, 93 ' 96 ' 100 dipoledomain measurements, 97 ' 98 and current-voltage measurements. 99 In Fig.…”

mentioning

confidence: 99%

Carrier Transport Properties

1992

Physical Properties of III‐V Semiconductor Compounds

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“…If we assume a simple velocity saturation model for both carriers , the output current saturation starts to occur when the current density reaches a critical current density (J c ) at a critical electric filed (Tebbenham et al, 1975, Hill et al, 1987. Because of the larger saturation velocity and smaller critical electric field for electrons, J c can be much larger for the UTC-PD than that for a pin-PD.…”

Section: Basic Characteristicsmentioning

confidence: 99%