Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Abstract

In a MIS (Metal/Insulator/Semiconductor) structure consisting of two terminals, a systematic analysis of the electrical charge transport mechanism through an insulator is essential for advanced electronic application devices such as next-generation memories based on resistance differences. Herein, we have verified the charge transfer phenomenon in MIOS (Metal/Insulator/Oxide Semiconductor) diodes through a defect engineering of the insulator. By selectively generating the oxygen vacancies in the insulator (Al 2 O 3 ), the MIOS diode rectification of the P ++ -Si anode/Al 2 O 3 /IGZO cathode reached 10 7 at 1.8 V and considerably suppressed the leakage current. Studying the current-voltage characteristics of MIOS diodes shows that the charge carrier transport mechanism can vary depending on the defect density as well as the difference between the CBM (conduction band minimum) of the semiconductor and the oxygen vacancy energy level of the insulator.

Ab-Initio Calculations of Oxygen Vacancy in Ga2O3 Crystals

“…At low Fermi energies, the 2+ charge state becomes more preferable, whereas when Fermi level is high, the neutral state becomes the most stable. For an oxygenpoor conditions, we obtain ε(2+/0)=4 eV for O(1), ε(2+/0)=3.8 eV for O(2), ε(2+/0)=3.1 eV for O (3). Under an oxygen-rich condition, formation energy increases by ~2.76 eV.…”

Nanoscale All-Oxide-Heterostructured Bio-inspired Optoresponsive Nociceptor

“…In fact, the thermal annealing of the heterostructured film in oxygen atmosphere has resulted in the deterioration of RS characteristics of them. It can be attributed to the decline of vacancy-related charge trapping sites [ 24 ] (Fig. S9).…”

Manipulating Edge Current in Hexagonal Boron Nitride via Doping and Friction

“…Conversely, the step-edges of a layered material (few atomic layers) covered with graphene exhibit extremely high friction compared to that of its basal plane (∼1000 times) due to the topographic effect . Undeniably, the rolling friction in the atomic scale causes variation in the interfacial charge density followed by the charge transfer between two layers in the heterostructure geometry . In fact, depending on the charge transition level (CTL) of the vacancy at the edge an insulator, the surface charges on conducting graphene (extended over the insulator) due to the rubbing of the tip can generate tribo-current under a fixed bias between tip and the substrate .…”

“…17 Undeniably, the rolling friction in the atomic scale causes variation in the interfacial charge density followed by the charge transfer between two layers in the heterostructure geometry. 18 In fact, depending on the charge transition level (CTL) of the vacancy at the edge an insulator, the surface charges on conducting graphene (extended over the insulator) due to the rubbing of the tip can generate tribo-current under a fixed bias between tip and the substrate. 19 Hence, charge transport through the 1D edge of a 2D-layered insulator can be realized via CAFM by means of suitable doping and proximity effect due to a tribo-charge-generating layer in the vdW heterostructure geometry.…”