Verification of Noise-Parameter Measurements and Uncertainties

Randa, J.; Dunsmore, Joel; Gu, Dazhen; Wong, Ken; Walker, Dave K.; Pollard, R.D.

doi:10.1109/tim.2011.2138270

Cited by 13 publications

(10 citation statements)

References 18 publications

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“…Later, Randa proposed the use of mismatched transmission lines with a reflection coefficient greater than 0.3 as verification devices. These mismatched transmission lines can be used to simulate a poorly-matched low noise amplifier (LNA) in a coaxial measurement system and provide a consistency check on the system [14]. For verification of an on-wafer noise parameter measurement system, a mismatched planar attenuator was developed [15]: this can represent the input impedance of a typical microwave transistor, however, it is believed that passive devices alone are insufficient to verify noise parameter measurement systems as they lack an effective excess noise ratio (ENR) [13].…”

Section: Introductionmentioning

confidence: 99%

“…Active devices, however, require high stability in the test environment, especially under varying temperature and humidity, which is rarely achieved in inter-laboratory trials. In 2011, Randa developed an improved verification method using passive and active devices in a cascade [14]. Some of the aforementioned issues can be overcome by using a hybrid passive-active verification device, however, the fact that the traceability problem for active devices remains unsolved, even at national metrology institutes, is a hindrance.…”

Section: Introductionmentioning

confidence: 99%

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Optimal Design of Passive Devices for Verifying On-Wafer Noise Parameter Measurement Systems

Liu

et al. 2020

IEEE Trans. Instrum. Meas.

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We propose the optimal design of passive devices that can be used to verify on-wafer noise parameter measurement systems. The design principles result from obtaining the minimum relative uncertainties of four noise parameters: Fmin, Rn, |Γopt|, and ∠Γopt for a wide range of S-parameters of a passive two-port network. A Monte-Carlo (MC) method has been used for the investigation and the simulation results show that |S11| plays a primary role in deciding the optimal design and must be within 0.5 to 0.6. |S21| plays a secondary role in the design and ideally it should be as small as possible. Based on these findings, we designed and fabricated three planar attenuators on a semi-insulating GaAs substrate. The test results (at up to 40 GHz) show excellent agreement with the simulation. This is the first time that the effect of different designs of passive verification devices on the system noise measurement has been analysed and the design principles of optimal passive devices are given.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optimal Design of Passive Devices for Verifying On-Wafer Noise Parameter Measurement Systems

Liu

et al. 2020

IEEE Trans. Instrum. Meas.

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“…Recently, another method of using a passive two-port network cascaded to an amplifier as a verification device was proposed [8,11,12] in which the noise parameters (NPs) of the passive device and the amplifier were measured separately and then summed. The total NP was compared with the measured NP when they were cascaded.…”

Section: Introductionmentioning

confidence: 99%

“…The NP of the passive device was derived from its S-parameters and the ambient temperature. This method was demonstrated effective in a coaxially configured measurement system [8,11]. However, the NF shown in those examples is more than 3 dB which is much higher than that of a LNA.…”

Section: Introductionmentioning

confidence: 99%

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Development of a verification technique for on-wafer noise figure measurement systems

Sun

et al. 2017

2017 90th ARFTG Microwave Measurement Symposium (ARFTG)

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-We present the development of a verification technique for on-wafer noise figure (NF) measurement systems. As the key element of the technique, a verification device consisting of a mismatched attenuator and a low noise amplifier (LNA) has been developed. The attenuator and the LNA are fabricated on two separate chips but joined with a bondwire. The verification procedure based on the device has also been developed and tested on an on-wafer vector network analyzer system with a noise measurement option across the frequency range from 2 GHz to 20 GHz. It has also been found that the bondwire contributes to negligible effect on the system when NF is high e.g. 3 dB but slightly higher when NF is smaller e.g. 1 dB.

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Amplifier and Transistor Noise‐Parameter Measurements

Randa

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Methods for measuring the noise parameters of amplifiers and on‐wafer transistors are reviewed. After some preliminary background information and conventions are presented, noise parameters are defined and the most common measurement strategies are presented, both for packaged amplifiers and for on‐wafer transistors (or amplifiers). The uncertainty analysis for such measurements is reviewed, and check and verification methods are presented.

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Verification of Noise-Parameter Measurements and Uncertainties

Cited by 13 publications

References 18 publications

Optimal Design of Passive Devices for Verifying On-Wafer Noise Parameter Measurement Systems

Optimal Design of Passive Devices for Verifying On-Wafer Noise Parameter Measurement Systems

Development of a verification technique for on-wafer noise figure measurement systems

Amplifier and Transistor Noise‐Parameter Measurements

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