Verification studies of thermophoretic protection for EUV masks

Rader, Daniel J.; Dedrick, Daniel E.; Beyer, Eric W.; Leung, Alvin H.; Klebanoff, Leonard E.

doi:10.1117/12.472288

Cited by 13 publications

(9 citation statements)

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“…(13) and (17), where the mean temperature T m is defined by Eq. (16). A more classical way to calculate the mass flow rate may be considered.…”

Section: Thermal Transpiration Flow In a Cylindrical Tube: Mass Flow mentioning

confidence: 99%

“…Thermal slip influences important practical engineering applications such as the thermal molecular pressure difference in vacuum lines connecting vessels maintained at different temperatures, the Knudsen compressor that has the peculiarity of working without moving parts [13,14], thermal transpiration flows in microfluidic or nanofluidic devices [15], and the thermophoretic protection of the lithographic mask from particle deposition contamination [16]. Finally the thermal slip is found to be very important in the recently discovered Leidenfrost ratched phenomenon, which provides now a novel tool for controlling gas flows over nano structured surfaces [17].…”

Section: Introductionmentioning

confidence: 99%

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A new method to measure the thermal slip coefficient

Rojas-Cárdenas

Graur

Perrier

et al. 2015

International Journal of Heat and Mass Transfer

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“…(13) and (17), where the mean temperature T m is defined by Eq. (16). A more classical way to calculate the mass flow rate may be considered.…”

Section: Thermal Transpiration Flow In a Cylindrical Tube: Mass Flow mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A new method to measure the thermal slip coefficient

Rojas-Cárdenas

Graur

Perrier

et al. 2015

International Journal of Heat and Mass Transfer

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“…One of the key challenges facing the development of Extreme UltraViolet Lithography (EUVL) was the protection of the lithographic mask from particle deposition. One proposed solution was the use of thermophoretic protection, in which the mask is kept slightly warmer than a parallel plate (Klebanoff and Rader, 2000;Rader et al, 2002). The flow of heat from the warmer mask to the cooler plate forces particles to move away from the mask, thereby providing protection from particle contamination.…”

Section: Motivationmentioning

confidence: 99%

Measurements of thermal accommodation coefficients.

Rader¹,

Castañeda²,

Torczynski³

et al. 2005

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A previously-developed experimental facility has been used to determine gas-surface thermal accommodation coefficients from the pressure dependence of the heat flux between parallel plates of similar material but different surface finish. Heat flux between the plates is inferred from measurements of temperature drop between the plate surface and an adjacent temperaturecontrolled water bath. Thermal accommodation measurements were determined from the pressure dependence of the heat flux for a fixed plate separation. Measurements of argon and nitrogen in contact with standard machined (lathed) or polished 304 stainless steel plates are indistinguishable within experimental uncertainty. Thus, the accommodation coefficient of 304 stainless steel with nitrogen and argon is estimated to be 0.80 and 0.87 , respectively, independent of the surface roughness within the range likely to be encountered in engineering practice. Measurements of the accommodation of helium showed a slight variation with 304 stainless steel surface roughness: 0.36 for a standard machine finish and 0.40 for a polished finish. Planned tests with carbon-nanotube-coated plates will be performed when 304 stainless-steel blanks have been successfully coated.0.02 ± 0.02 ± 0.02 ± 0.02 ± 4

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“…Thermophoretic protection can prevent particle deposition on EUVL masks during exposure [119][120][121][122]. This method uses thermophoretic force to push particles away from the mask.…”

Section: Maskmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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Verification studies of thermophoretic protection for EUV masks

Cited by 13 publications

References 0 publications

A new method to measure the thermal slip coefficient

A new method to measure the thermal slip coefficient

Measurements of thermal accommodation coefficients.

Next-generation lithography for 22 and 16 nm technology nodes and beyond

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