Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector

Du, Ying; Wang, Jie; Wang, Tao; Ye, Xu; Yin, Liying; Yu, Pengfei; Zha, Gangqiang

doi:10.1016/j.jcrysgro.2010.11.086

Cited by 43 publications

(21 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5(a) shows an infrared microscopy image of a representative region of the 6 Â 5 mm 2 from a CdMnTe wafer. The corresponding Te inclusions concentration was within the range 7 Â 10 4 -9 Â 10 4 cm À 3 , a little higher than CdMnTe wafers grown by the melt Bridgman technique [15]. This phenomenon can be ascribed to the irregular growth interface, which trapped Te-rich CdMnTe alloy during the growth process [17].…”

Section: Ir Transmittance and Ir Imaging Measurementsmentioning

confidence: 93%

See 1 more Smart Citation

Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique

Wang

et al. 2012

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

Section: Ir Transmittance and Ir Imaging Measurementsmentioning

confidence: 93%

“…3(b), as described in detail in Ref. [15]. There are ten twins paralleled to each other in the wafer by the vertical Bridgman technique, while only one twin in the wafer by the Te solution technique.…”

Section: Crystal Growthmentioning

confidence: 99%

Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique

Wang

et al. 2012

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…(Cd 1 À x , Mn x )Te (CMT) has been demonstrated to be a good candidate of the X-ray and γ-ray detector application, competing with (Cd 1 À x , Zn x )Te (CZT) [1,2]. CMT has the same structural and electrical properties of CZT, and has some advantages over that of CZT.…”

Section: Introductionmentioning

confidence: 99%

THM growth of (Cd, Mn)Te single crystal with the source ingot synthesized by VB method

Liang

Qin

Zhang

et al. 2015

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Currently, the CdMnTe crystal is usually grown by the Vertical Bridgman (VB) method [8,9]. The method has the advantages of its simplicity and capability of adjusting the growth temperature gradient and velocity.…”

Section: Introductionmentioning

confidence: 99%

Comparison of cadmium manganese telluride crystals grown by traveling heater method and vertical Bridgman method

Lai

Zhang

Wang

et al. 2015

Crystal Research and Technology

View full text Add to dashboard Cite

In this paper, the CdMnTe crystals were grown by the Travelling Heater Method (THM) and the Vertical Bridgman (VB) method, respectively. The crystal properties, including the Mn axial distribution, impurity concentrations, resistivity, Hall effects and energy response spectra, were characterized and compared. The results shown that the CdMnTe crystal grown by the THM had more uniform Mn distribution and lower impurity concentrations compared to the crystal grown by VB method. The resistivity of CdMnTe grown by THM was (1.5 ß 8) × 10 10 .cm, while the resistivity of CdMnTe grown by VB was 10 7 ß10 8 .cm. TheIn dopant distributed uniformly throughout the crystal ingot grown by THM with the doping concentration of 0.6-0.7 ppm, while the In dopant concentration throughout the crystal grown by VB method is in the range of 1.31-2.4 ppm. Hall measurements revealed that the conductivity of the THM grown crystal was weak n-type conductivity and the VB grown crystal was p-type conductivity. A planar CdMnTe detector from the THM grown crystal showed a resolution of 8% of the 241 Am radiation at 59.5 keV peak, however, no energy response was revealed with the CdMnTe detector by the VB method. The results demonstrate that CdMnTe crystal grown by THM have better crystal quality and detector properties compared to that by VB method.

show abstract

Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector

Cited by 43 publications

References 17 publications

Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique

Solution growth of In-doped CdMnTe crystals by the vertical Bridgman method with the ACRT technique

THM growth of (Cd, Mn)Te single crystal with the source ingot synthesized by VB method

Comparison of cadmium manganese telluride crystals grown by traveling heater method and vertical Bridgman method

Contact Info

Product

Resources

About