Vertical Electric Fields and Field Change Parameters Due to Partly Inclined Lightning Leader Channels

Gomes, Chandima; Cooray, Vernon; Kadir, Mohd Zainal Abidin Ab

doi:10.2528/pier12081809

Cited by 5 publications

(5 citation statements)

References 48 publications

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“…More exact calculations for a composite material radome need further considerations [23]. Moreover, the effects of non-vertical lightning channel [24] will also be considered in a future extension of the basic lightning-aircraft electrodynamics model presented here.…”

Section: Aircraft Into Transmission Line Circuit Modelmentioning

confidence: 99%

Aircraft-Lightning Electrodynamics Using the Transmission Line Model Part I: Review of the Transmission Line Model

Thirukumaran¹,

Hoole²,

Ramiah³

et al. 2013

PIER M

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This work presents a self-consistent and self-contained model to study and analyze aircraft-lightning electrodynamics. In this paper, we review the well developed and reported transmission line model of the cloud-to-ground (CG) lightning return stroke. Subsequently, the incorporation of a circuit model of the aircraft into the return stroke model is considered. The direct hit characteristics of aircraft body lightning currents for both CG and GC (groundto-cloud) are important when designing protection, shielding and filtering systems for airborne electronic and electrical systems within the aircraft system. Moreover, the model will allow design of aircraft structure and geometry to minimize energy dissipation into the aircraft structure and systems. Basic electromagnetic theory is used to show the validity of considering the return stroke as a transverse magnetic wave along a transmission line. A distributed transmission line model for the aircraft and the return stroke channel of the lightning is used to simulate the return strokes of CG and GC flashes. The effects of the aircraft geometry with sharp edges are included in the computation of aircraft capacitance values, both distributed as well as lumped values.

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Section: Aircraft Into Transmission Line Circuit Modelmentioning

confidence: 99%

Aircraft-Lightning Electrodynamics Using the Transmission Line Model Part I: Review of the Transmission Line Model

Thirukumaran¹,

Hoole²,

Ramiah³

et al. 2013

PIER M

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“…The sign convention that is used is important to describe an electric field change of a waveform of a flash. According to the atmospheric sign convention, a positive field (an upward deflection in the electric field waveform) corresponds to negative charges being lowered to the ground and vice versa [1][2][3][4]. Thus, a positive field change indicates that the flash is negative because negative charges are being lowered to the ground or positive charges are being lifted to the cloud.…”

Section: Introductionmentioning

confidence: 99%

Unique Stroke-Multiplicity of Positive Lightning in Malaysia

Hamzah

Kadir

Gomes

et al. 2015

AMM

Self Cite

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This paper presents the unique characteristics of positive lightning generated vertical electric field waveforms recorded in Malaysia. The focus of the study was the waveforms due to positive lightning and their number of return strokes in a flash. A total of 172 lightning ground flash records were analysed, out of which 57 flashes contained positive lightning with a number of them having high numbers of subsequent return strokes which is somewhat unusual with observations elsewhere. The field measurements were done by using a parallel plate antenna coupled with a recording system. In contrary to the majority of positive lightning return strokes that has been recorded previously, where the average multiplicity is one, this study showed an average multiplicity of 3.86 which is almost four times higher than that is usually observed.

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“…However, there are a number of problems associated with the viable integration of bottom-up grown semiconductor NWs into standard integrated circuit complementary metaloxide-semiconductor (CMOS) devices' design and processing. The design of the CMOS devices is based on the controlled active channel of the logic devices lying coplanar to the Si-wafer substrate and requires a very high degree of control over placement of the devices so that they may be individually addressed for successful CMOS device operation (Gomes et al, 2013). Normally, bottom-up grown semiconductor NWs are grown as uncontrolled entangled meshes and consequently lack the prerequisite ordering, and control of placement required for CMOS standard manufacturing order than that and another issue is padding, connecting successful probing unit is also another problem.…”

Section: Introductionmentioning

confidence: 99%

Silicon nanowire fabrication

Adam

Hashim

2014

Microelectronics International

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Purpose – The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography coupled with shallow anisotropic etching. Design/methodology/approach – A 5-inch p-type silicon-on-insulator (SOI) coated with 250nm layer and Photoresist (PR) with thickness of 400nm is coated in order to make pattern transfer via binary mask, after the exposure and development, a resist pattern between 3 μm-5 μm were obtained, Oxygen plasma spreen was used to reduce the size of the PR to 800 μm, after this, the wafer with 800 μm was loaded into SAMCO inductively coupled plasma (ICP)-RIE and got silicoon microwire was obtained. Next, the sample was put into an oxidation furnace for 15, 30, 45 and 60 minutes and the sample was removed and dipped into a buffered oxide etch solution for five minutes to remove all the SiO2 ashes. Findings – The morphological characterization was conducted using scanning electron microscopy and atomic force microscopy. At terminal two, gold electrodes which were designated as source and drain were fabricated on top of individual NWs using conventional lithography electrical and chemical response. Once the trimming process has been completed, the device's current–voltage (I-V) characteristic was measured by using a Keithley 4200 semiconductor parameter analyser. Devices with different width of wires approximately 20, 40, 60 and 80 nm were characterized. The wire current variation as a function of the pH variation in voltage was investigated: pH monitoring for variations of pH values between 5 and 9. Originality/value – This paper provides useful information on novel and yet simple cost-effective fabrication of SiNW; as such, it should be of interest to a broad readership, especially those interested in micro/nanofabrication.

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Vertical Electric Fields and Field Change Parameters Due to Partly Inclined Lightning Leader Channels

Cited by 5 publications

References 48 publications

Aircraft-Lightning Electrodynamics Using the Transmission Line Model Part I: Review of the Transmission Line Model

Aircraft-Lightning Electrodynamics Using the Transmission Line Model Part I: Review of the Transmission Line Model

Unique Stroke-Multiplicity of Positive Lightning in Malaysia

Silicon nanowire fabrication

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