Vertical GaN Power Diodes With a Bilayer Edge Termination

Dickerson, Jeramy Ray; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael Patrick; Moseley, Michael William; Armstrong, Andrew M.; Kaplar, Robert; Kizilyalli, I.C.; Aktaş, Özgür; Wierer, Jonathan J.

doi:10.1109/ted.2015.2502186

Cited by 103 publications

(55 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In literature, there exists a large class of nonlinear generation‐recombination processes including defects which can lead to non‐equilibrium phase transition of first order resulting in the S‐shape I – V curve . Considering linear potential drop in GaN:C and data of Figure b, the electric field at

V_{bd,up}

is estimated to 0.4–0.5 MV cm −1 which is much less than the field 3–3.4 MV cm −1 for generation of electron‐hole pairs by impact ionization in GaN . So we can likely exclude the latter mechanism as the origin for the breakdown (here we do not consider extreme modification of electric field by strong injection effects as e.g.…”

Section: Discussionmentioning

confidence: 96%

Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

Koller

Pobegen²,

Ostermaier

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

V_{bd,up}

Section: Discussionmentioning

confidence: 96%

Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

Koller

Pobegen²,

Ostermaier

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The finite thickness of the layers (1-20 lm (Refs. [8][9][10][11]) themselves induce boundary scattering. Taken together, the thermal conductivity of a GaN device layer is therefore defined not by the intrinsic material characteristics but rather by the interplay of these extrinsic scattering sources.…”

Section: Introductionmentioning

confidence: 99%

Size dictated thermal conductivity of GaN

Beechem

McDonald

Fuller

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001) High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n -GaN/sapphire (0001): Doping dependenceThe thermal conductivity of n-and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3-4 lm was investigated using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (10 15 -10 18 cm -3 ), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends-and their overall reduction relative to bulk-are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness. Published by AIP Publishing.

show abstract

“…GaN is an attractive material for power electronics due to its wide bandgap, large electron saturation velocity, and high breakdown field . Vertical geometry devices are attractive due to their large blocking voltages and small form factor . Recently, various geometries including trench designs have been explored for these applications.…”

Section: Successes and Challengesmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

View full text Add to dashboard Cite

The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

show abstract

Vertical GaN Power Diodes With a Bilayer Edge Termination

Cited by 103 publications

References 19 publications

Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

Size dictated thermal conductivity of GaN

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Contact Info

Product

Resources

About