Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching

Xiao, Ming; Zhang, Ruizhe; Schlenvogt, Garrett; Jokinen, Thomas; Wang, Han; Zhang, Yuhao

doi:10.1109/drc46940.2019.9046481

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…Finally, the successful selective-area doping in GaN can allow the realization of the superjunction (SJ) drift region, which can be integrated with the FinFET and trigate channels. Recently, an SJ-FinFET was proposed, in which one or multiple fin channels are placed on top of each n-type pillar in the SJ drift region [160,171]. The combination of high-density fin channel and SJ drift region is predicted to far outperform the 1D GaN limit and provide excellent switching performance.…”

Section: Vertical Power Fin-mosfetsmentioning

confidence: 99%

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-frequency (RF) applications. While commercial GaN devices are increasingly being adopted in data centers, electric vehicles, consumer electronics, telecom and defense applications, their performance is still far from the intrinsic GaN limit. In the last few years, the fin field-effect transistor (FinFET) and trigate architectures have been leveraged to develop a new generation of GaN power and RF devices, which have continuously advanced the state-of-the-art in the area of microwave and power electronics. Very different from Si digital FinFET devices, GaN FinFETs have allowed for numerous structural innovations based on engineering the two-dimensional-electron gas or p–n junctions, in both lateral and vertical architectures. The superior gate controllability in these fin-based GaN devices has not only allowed higher current on/off ratio, steeper threshold swing, and suppression of short-channel effects, but also enhancement-mode operation, on-resistance reduction, current collapse alleviation, linearity improvement, higher operating frequency, and enhanced thermal management. Several GaN FinFET and trigate device technologies are close to commercialization. This review paper presents a global overview of the reported GaN FinFET and trigate device technologies for RF and power applications, as well as provides in-depth analyses correlating device design parameters to device performance space. The paper concludes with a summary of current challenges and exciting research opportunities in this very dynamic research field.

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Section: Vertical Power Fin-mosfetsmentioning

confidence: 99%

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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“…As vertical GaN devices are being developed for multikilovolt applications, it is of great significance to discuss the applicability of the revealed design trade-offs for higher voltage ratings. Vertical devices with higher breakdown voltage are typically designed with a larger thickness and smaller doping concentration in the drift layer [35], [36], which results in a larger 𝑅 𝐷3 and thus an increased 𝑉 𝑡𝑢𝑟𝑛 . Consequently, the higher 𝑉 𝑡𝑢𝑟𝑛 prevents the devices from operating in bipolar mode during forward conduction, which deprives the devices of their surge capability, to the detriment of the practical circuit applications [37].…”

Section: B Forward Characteristicsmentioning

confidence: 99%

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Wang

Chen

et al. 2022

IEEE J. Electron Devices Soc.

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In this paper, we systematically investigated the impact of the key structural parameters on the reverse and forward characteristics of gallium nitride (GaN) based vertical merged pn-Schottky (MPS) diode by numerical simulation. In comparison with conventional GaN-based vertical Schottky barrier diode, the MPS structure can suppress the high electric field at the Schottky interface with the inserted p-GaN, thereby enhancing the reverse breakdown characteristics. However, the adoption of the p-GaN structure can result in a locally crowded electric field at reserve bias condition and thus a premature breakdown of the device. Moreover, the p-GaN structure depletes the vertical channel region, which may degrade the onperformance at forward bias condition. We found that the doping concentration, width, and depth of the p-GaN structure are closely correlated with the electric field distribution at reverse bias and the channel resistance at forward bias, and thus determines the reverse and forward characteristics of the MPS diodes. The unique forward unipolar/bipolar characteristics of the MPS diode was also investigated and discussed systematically. The results can pave the way for the development of GaN power electronic devices towards a compact high-frequency and high-voltage power electronic system.

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High-breakdown-voltage GaN-based vertical FinFET design

Wang,

Liu,

et al. 2023

J. Power Electron.

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Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power Switching

Cited by 4 publications

References 5 publications

GaN FinFETs and trigate devices for power and RF applications: review and perspective

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

High-breakdown-voltage GaN-based vertical FinFET design

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