Vertical metrology using scanning-probe microscopes: Imaging distortions and measurement repeatability

Edwards, Hal; McGlothlin, Rudye; Elisa, U

doi:10.1016/s0920-5489(99)92287-0

Cited by 3 publications

(6 citation statements)

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“…1 Nano-Crystallography Group, Department of Physics, Portland State University, Portland, OR 97207-0751, USA. 2 Intel, Hillsboro, OR, USA.…”

Section: Discussionmentioning

confidence: 99%

“…(Crystallographic notations such as p4 and basic 2D crystallography are briefly discussed in "Appendix A".) Using Photoshop, 2 we have artificially constructed in Fig. 1b an image somewhat akin to what one would see with three SPM tips shifted laterally and vertically with respect to each other, simultaneously scanning the same surface, with signals beating against each other.…”

Section: Open Accessmentioning

confidence: 99%

“…Averaging methods have long been used to remove scanning errors. There are also well-established techniques for straightening out keystone-shaped images that result from sample tilt and image drift, and for the removal of image bow by z-flattening using least-squares higher-order polynomials to model this distortion [1][2][3]. Removing multiple-tip artifacts from SPM images has, however, only recently been accomplished through the adoption of crystallographic image processing (CIP) techniques [4][5][6][7], which one may consider as being a kind of a crystallographic averaging in reciprocal (Fourier) space of the intensity of symmetry-related features in direct space.…”

Section: Introductionmentioning

confidence: 99%

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Removal of multiple-tip artifacts from scanning tunneling microscope images by crystallographic averaging

Straton

Moon

Bilyeu

et al. 2015

Adv Struct Chem Imag

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Crystallographic image processing (CIP) techniques may be utilized in scanning probe microscopy (SPM) to glean information that has been obscured by signals from multiple probe tips. This may be of particular importance for scanning tunneling microscopy (STM) and requires images from samples that are periodic in two dimensions (2D). The image-forming current for double-tips in STM is derived with a slight modification of the independent-orbital approximation (IOA) to allow for two or more tips. Our analysis clarifies why crystallographic averaging works well in removing the effects of a blunt STM tip (that consists of multiple mini-tips) from recorded 2D periodic images and also outlines the limitations of this image-processing technique for certain spatial separations of STM double-tips. Simulations of multiple mini-tip effects in STM images (that ignore electron interference effects) may be understood as modeling multiple mini-tip (or tip shape) effects in images that were recorded with other types of SPMs as long as the lateral sample feature sizes to be imaged are much larger than the effective scanning probe tip sizes.

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“…1 Nano-Crystallography Group, Department of Physics, Portland State University, Portland, OR 97207-0751, USA. 2 Intel, Hillsboro, OR, USA.…”

Section: Discussionmentioning

confidence: 99%

Section: Open Accessmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Removal of multiple-tip artifacts from scanning tunneling microscope images by crystallographic averaging

Straton

Moon

Bilyeu

et al. 2015

Adv Struct Chem Imag

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“…The correction of scanner bow in data processing has been the subject of previous investigations by others. [25][26] In Fig. 9, we illustrate an elementary correction method that we used for analysis of our preliminary data.…”

Section: Vendor Spec On Non-linearitymentioning

confidence: 99%

“…For future work, we are considering the possibility of implementing a more elaborate scanner bow correction methodology developed by Edwards, et al 26 This method involves the simultaneous fitting of both a polynomial and a step function to the scan lines. This would have the advantage of using more of the available data, and the residual impact of scanner bow on the apparent step heights is expected to be much smaller.…”

Section: Vendor Spec On Non-linearitymentioning

confidence: 99%

Reference metrology in a research fab: the NIST clean calibrations thrust

Dixson

Orji

et al. 2009

Metrology, Inspection, and Process Control for Microlithography XXIII

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In 2004, the National Institute of Standards and Technology (NIST) commissioned the Advanced Measurement Laboratory (AML) -a state-of-the-art, five-wing laboratory complex for leading edge NIST research. The NIST NanoFab -a 1765 m 2 (19 000 ft 2 ) clean room with 743 m 2 (8000 ft 2 ) of class 100 space -is the anchor of this facility and an integral component of the new Center for Nanoscale Science and Technology (CNST) at NIST.Although the CNST/NanoFab is a nanotechnology research facility with a different strategic focus than a current high volume semiconductor fab, metrology tools still play an important role in the nanofabrication research conducted here. Some of the metrology tools available to users of the NanoFab include stylus profiling, scanning electron microscopy (SEM), and atomic force microscopy (AFM).Since 2001, NIST has collaborated with SEMATECH to implement a reference measurement system (RMS) using critical dimension atomic force microscopy (CD-AFM). NIST contributed traceable metrology expertise and SEMATECH provided access to leading edge metrology tools in their facilities. Now, in the newly launched "clean calibrations" thrust at NIST, we are implementing the reference metrology paradigm on several tools in the CNST/NanoFab. Initially, we have focused on calibration, monitoring, and uncertainty analysis for a three-tool set consisting of a stylus profiler, an SEM, and an AFM.Our goal is the development of new and supplemental calibrations and standards that will benefit from the Class 100 environment available in the NanoFab and offering our customers calibration options that do not require exposing their samples to less clean environments. We have completed a preliminary evaluation of the performance of these instruments. The results suggest that the achievable uncertainties are generally consistent with our measurement goals.

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Amorphization-assisted nanoscale wear during the running-in process

Altoé

Martini

2017

Wear

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Atomistic simulations were used to study the nanoscale wear of crystalline silicon with a native oxide sliding against amorphous silicon dioxide. The size, shape and crystallographic orientation of the model were defined to be comparable to those in a corresponding atomic force microscope experiment, where the tip was imaged before and after 40 nm of sliding using ex situ transmission electron microscopy. Tip wear was quantified in the simulation as the volume of silicon atoms removed from the tip at intervals up to 40 nm sliding distance. We also quantified amorphization during sliding as the change of tip material from crystalline to amorphous. The rate of amorphization decreased with sliding distance, and this trend was analyzed in the context of a previously-proposed analytical model for crystalline-to-amorphous transitions and explained qualitatively by local strain distributions within the tip. Both wear and amorphization were found to exhibit similar trends, but the wear rate was faster than the rate of amorphization. The results suggest that amorphization may be a dominant mechanism of nanoscale wear during the early stages of running-in, but less so during steady-state sliding.

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Vertical metrology using scanning-probe microscopes: Imaging distortions and measurement repeatability

Cited by 3 publications

References 0 publications

Removal of multiple-tip artifacts from scanning tunneling microscope images by crystallographic averaging

Removal of multiple-tip artifacts from scanning tunneling microscope images by crystallographic averaging

Reference metrology in a research fab: the NIST clean calibrations thrust

Amorphization-assisted nanoscale wear during the running-in process

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