Vertical organic transistors withstanding high voltage bias

Abstract

Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 103–104 and an output current density of 5–10 mA/cm2 were achieved.

Vertical organic transistors with short channels for multifunctional optoelectronic devices

“…However, porous base electrodes in SCLVTs need to be filled with OSCs, which is a limiting factor for the fabrication technology. 40,61,62 Dollinger et al presented an in situ method for passivating the oxide film of the base electrode by wet electrochemical anodization. It has been demonstrated that such an anodization process is not affecting the C 60 active layer.…”

High-current operation of vertical-type organic transistor with preferentially oriented molecular film

“…The observed J DS was extremely high compared with those of other vertical-type organic transistors. [16][17][18][19][20][21][22][23][24][25][26] The gate current density (J G ) also increased with increasing V DS ; however, the observed J G was three orders of magnitude lower than J DS . Carriers cannot be injected in a gate electrode with increasing positive gate voltage unless the gate voltage exceeds the breakdown voltage.…”

“…Several groups have reported vertical-type organic transistors such as polymer grid transistors, organic a Email: fukagawa.h-fe@nhk.or.jp b Present address: Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino-city, Nagano, 391-0292, Japan c Present address: Tohoku University, 6-6-05 Aramaki Aza Aoba, Aoba-ku, Sendai, 980-8579, Japan d Present address: Yamagata University, Research Center for Organic Electronics, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan static induction transistors (SITs), metal-base organic transistors (MBOTs), space-charge-limited transistors (SCLTs), patterned electrode vertical organic field effect transistor (PE-VOFET) and permeable-base transistor (PMBT) to realize a short channel. [15][16][17][18][19][20][21][22][23][24][25][26] However, the relationship between the crystalline axis of the organic film and the carrier transport direction has not been examined for vertical-type organic transistors. If the planar molecules are oriented with the molecular plane parallel to the substrate in a vertical-type organic transistor, the carrier transport direction can easily be aligned with the π-π stacking direction of the organic film.…”

“…5,9,10 In addition to planar OTFTs, vertical-type organic transistors have been reported in recent years. [15][16][17][18][19][20][21][22][23][24][25][26] The vertical structure is considered promising for attaining high-current and low-voltage operation, in which the carriers flow across the thin film in the vertical direction, perpendicular to the film plane, with short channel paths having lengths corresponding to the semiconductor film thickness. Several groups have reported vertical-type organic transistors such as polymer grid transistors, organic a Email: fukagawa.h-fe@nhk.or.jp b Present address: Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino-city, Nagano, 391-0292, Japan c Present address: Tohoku University, 6-6-05 Aramaki Aza Aoba, Aoba-ku, Sendai, 980-8579, Japan d Present address: Yamagata University, Research Center for Organic Electronics, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan static induction transistors (SITs), metal-base organic transistors (MBOTs), space-charge-limited transistors (SCLTs), patterned electrode vertical organic field effect transistor (PE-VOFET) and permeable-base transistor (PMBT) to realize a short channel.…”