Vertical Slit FET at 7-nm Node and Beyond

Yang, Ping-Lin; Hook, T.B.; Oldiges, P.; Doris, B.

doi:10.1109/ted.2016.2577629

Cited by 23 publications

(5 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…66 significantly inhibited tumor growth in a breast cancer xenograft mouse model. 76 2,4,5-Trisubstituted pyrimidine 30m (Fig. 4A) was a potent and selective CDK9 inhibitor with an apparent inhibition constant (K i ) value of 10 nM, which showed 100-fold selectivity for CDK9 over CDK1 and CDK2.…”

Section: Zotiraciclibmentioning

confidence: 99%

CDK9 inhibitors in cancer research

Huang

Wang

et al. 2022

RSC Med. Chem.

View full text Add to dashboard Cite

show abstract

Section: Zotiraciclibmentioning

confidence: 99%

CDK9 inhibitors in cancer research

Huang

Wang

et al. 2022

RSC Med. Chem.

View full text Add to dashboard Cite

show abstract

“…Source-to-drain quantum tunnelling [7]- [9] or variability [10]- [12] is much more pronounced and deteriorate the I ON /I OFF ratio in current ultrascaled devices. To overcome this problem, a variety of new architectures, including ultrathin silicon-on-insulator (SOI) [13]- [15], double gate [13], [16], FinFETs [17], [18], trigate [19], -gate [20], junctionless (JL) [21], and gate all-around nanowire FETs [22], have therefore been developed to improve the electrostatic control of the conducting channel. In those architectures, the surface surrounded by the gate is increased in relation to the channel volume, improving the electrostatic control.…”

Section: Impact Of Randomly Distributed Dopants Onmentioning

confidence: 99%

Impact of Randomly Distributed Dopants on $\Omega$ -Gate Junctionless Silicon Nanowire Transistors

Carrillo-Nuñez

Mirza

Paul

et al. 2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

This paper presents experimental and simulation analysis of an -shaped silicon junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and diameter of the Si channel of 8 nm. Our experimental measurements reveal that the ON-currents up to 1.15 mA/μm for 1.0 V and 2.52 mA/μm for the 1.8-V gate overdrive with an OFF-current set at 100 nA/μm. Also, the experiment data reveal more than eight orders of magnitude ON-current to OFF-current ratios and an excellent subthreshold slope of 66 mV/dec recorded at room temperature. The obtained experimental current-voltage characteristics are used as a reference point to calibrate the simulations models used in this paper. Our simulation data show good agreement with the experimental results. All simulations are based on driftdiffusion formalism with activated density gradient quantum corrections. Once the simulations methodology is established, the simulations are calibrated to the experimental data. After this, we have performed statistical numerical experiments of a set of 500 different JL-NWTs. Each device has a unique random distribution of the discrete dopants within the silicon body. From those statistical simulations, we extracted important figures of merit, such as OFF-current and ON-current, subthreshold slope, and voltage threshold. The performed statistical analysis, on samples of those 500 JL-NWTs, shows that the mean I D -V Gs characteristic is in excellent agreement with the experimental measurements. Moreover, the mean I D -V Gs characteristic reproduces better the subthreshold slope data obtained from the experiment in comparison to the continuous model simulation. Finally, performance predictions for the JL transistor with shorter gate lengths and thinner oxide regions are carried out. Among the simulated JL transistors, the configuration with 25-nm gate length and 2-nm oxide thickness shows the most promising characteristics offering scalable designs.Index Terms-Drift diffusion (DD), electronic transport, junctionless (JL) nanowire field-effect transistors (FETs) (JL-NWTs), random dopants, scattering mechanisms, silicon nanowire, simulations, variability.

show abstract

“…VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology has been proposed as an alternative to traditional bulk CMOS technology. The field effect devices using this technology have already been investigated in theory and experiment [13][14][15][16]. These include a field effect VES-FET device and its junction counterpart, the VES-JFET [17].…”

Section: Introductionmentioning

confidence: 99%

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Mierzwinski

Kuźmicz

2023

Electronics

View full text Add to dashboard Cite

This paper summarizes the results of investigations of bipolar transistors made in VESTIC (Vertical Slit Transistor-based Integrated Circuits) technology. This technology was proposed by W. Maly as an alternative to classical bulk CMOS technology. However, the basic VESTIC cell can be used not only to make field effect transistors but also to make bipolar transistors. Their structures differ in many ways from existing structures of bipolar transistors. The investigations reported here aim to answer the question: can VESTIC-based lateral bipolar transistors be useful as active devices, and can they be made technologically compatible with field effect VESTIC devices? The theoretical studies were followed by the fabrication and measurements of VESTIC-based p-n-p and n-p-n bipolar devices. Although the manufacturing technology available was far from optimal, working bipolar devices were obtained. The results show that VESTIC-based bipolar devices may achieve acceptable parameters if made with state-of-the-art manufacturing technology. The main outcome of the research reported in the paper is that p-n-p and n-p-n bipolar transistors with acceptable parameters may be fabricated, together with field effect devices, in VESTIC-based integrated circuits. As a result, the VESTIC technology could become the new original BiCMOS technology.

show abstract

Vertical Slit FET at 7-nm Node and Beyond

Cited by 23 publications

References 21 publications

CDK9 inhibitors in cancer research

CDK9 inhibitors in cancer research

Impact of Randomly Distributed Dopants on $\Omega$ -Gate Junctionless Silicon Nanowire Transistors

VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector

Contact Info

Product

Resources

About