Vertical variants of PIN and p-NOI tunnel electronic devices and potential applications

Ravariu, Cristian; Babarada, F.; Mihăiescu, Dan Eduard; Idu, Mihai; Vladoianu, L.; Manea, E.

doi:10.1109/iseee.2017.8170674

Cited by 5 publications

(6 citation statements)

References 17 publications

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“…The mOn and MIM structures use the same thin insulator tunneling principle but benefit on materials placed on the front plan of the Si wafer. Both of them are associated with the planar variant of a NOI device, simply noted by p-NOI device [15].…”

Section: The Work Principle and Simulation Results For A P-noi Structurementioning

confidence: 99%

“…This chapter describes a pesticide biosensors fabricated using nanoporous Si materials to entrap the receptor element, along with the transducer element consisting of an interdigitated capacitive electrodes to detect pesticides, like paraoxon. The novel detection scheme is using interdigitated capacitive electrodes which highlighted a special nanostructure called as the planar nothing on insulator (p-NOI) [15,16]. The biodetection is based on the hydrolysis under the acetylcholinesterase (AChE) enzyme action, as biosensor-specific receptor [17].…”

Section: Introductionmentioning

confidence: 99%

“…The first one must accomplish an isolation through the bottom nanoporous material. The second one has the distance between fingers high enough versus a nanometric p-NOI that allows a tunnel current flow [15]. Hence, the tunneling conduction is missing in this case.…”

Section: Introductionmentioning

confidence: 99%

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Integrated p-NOI Structures on Nanoporous Material Designed for Biodetection

Ravariu¹,

Manea²,

Popescu³

et al. 2018

Green Electronics

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Pesticides are utilized to protect the crops, destroying or controlling any pest. Unfortunately, pesticides pollute the entire environment: plants, organisms, soil, and water. This chapter describes a paraoxon pesticide biosensor that includes nanostructures and porous materials integrated on silicon (Si), as convergent objectives of the green microelectronics strategy. The transducer element is in an interdigitated capacitive electrode that recently highlighted a special nanostructure-the planar nothing on insulator (p-NOI)-included in the capacitive detection system. The biodetection is based on the hydrolysis of the acetylcholinesterase (AChE) enzyme as biosensor receptor. So, the final application is an enzymatic biosensor that utilizes the nanoporous Si layer for the enzyme adsorption, with p-NOI capacitive transducer, for the environmental monitoring.

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Section: The Work Principle and Simulation Results For A P-noi Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Integrated p-NOI Structures on Nanoporous Material Designed for Biodetection

Ravariu¹,

Manea²,

Popescu³

et al. 2018

Green Electronics

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“…The disjunction between NOI devices and TFET has been discussed elsewhere [12,13]. Metal-insulator-metal (MIM) tunneling structures [18] were recently compared to planar-NOI devices [19,20]. The tunneling conduction in a semiconductor NOI device is the Folwer-Nordheim mechanism [12], as in similar vacuum nano-transistors [3,7].…”

Section: Noi-mam Device Principlementioning

confidence: 99%

Manufacture of a nothing on insulator nano-structure with two Cr/Au nanowires separated by 18 nm air gap

et al. 2020

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Despite the huge number of previous studies of vacuum devices, nanoscale technologies open new paradigms. Vacuum nanodevices bring multiple advantages, such as air instead of a vacuum for the nanometric gap, strong non-linear characteristics, and a metal oxide semiconductor co-integration facility. This paper presents the manufacturing process and measured characteristics of a nano-device that uses a sub-36 nm gap between two Cr/Au nano-wires. In this way, the metal nano-wires replace the semiconductor nano-islands, while an air gap stands for the ‘nothing’ region of a first-time fabricated variant for a nothing on insulator device. The electron beam lithography mask-less technology is pushed to its technical limit to define a minimum 18 nm-wide gap between two Cr/Au nanowires. The main current–voltage curves are measured for this first real device called a nothing on insulator in the variant metal–air–metal, indicating 10 nA at 10 V as the optimal variant. The main connections between the measurements and technology are emphasized.

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“…The functionality of a NOI transistor with metal instead semiconductor [17] and with the oxide instead vacuum [18] was recently checked by other authors too, but a planar implementation was only drafted in 2017, [19][20][21][22]. The actual p-NOI structure with 10nm oxide thickness and doping profile in the film is presented in fig.…”

Section: First Tunneling Tests For the P-noi Device With Two Terminalsmentioning

confidence: 99%

Design of the Technological Flow to Produce a Planar Variant of the Nothing on Insulator Device and its Tunneling Conduction

Ravariu

Manea

Pârvulescu

et al. 2019

JNanoR

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This paper starts from the leakage currents through the gates of the last MOSFET generations and propose a related structure, which can be inherently included as parasitic device in any future MOSFET sub-22nm or can be deliberated fabricated to induce its own behavior. This structure is abbreviated in this paper by p-NOI (planar-Nothing On Insulator) and it can be simply produced by the planar Si-technology. Its concept is derived from the NOI (Nothing On Insulator) concept, but replaces the vacuum with oxide. The conduction mechanism is based on a thin oxide tunneling, under the Fowler-Nordheim's law. The current flow occurs from a source to a lateral drain, without an inversion channel and without a lateral pn junction, as in the MOSFET case. A similar investigated device by other authors is a fabricated MIM (Metal-Insulator-Metal) structure, which is compared with the actual p-NOI simulation. Finally, a dual gate p-NOI device is investigated. The depletion-accumulation transition is captured by the static I-V static characteristics. Using two steps of oxide, of 2nm and 10nm, a second planar-NOI structure with three terminals was studied. The (G) terminal is associated to a Gate and the (S) terminal is associated to a Source of a Field Effect Transistor. Some particular applications as diode or transistor are emphasized versus the gate biasing regime.

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Vertical variants of PIN and p-NOI tunnel electronic devices and potential applications

Cited by 5 publications

References 17 publications

Integrated p-NOI Structures on Nanoporous Material Designed for Biodetection

Integrated p-NOI Structures on Nanoporous Material Designed for Biodetection

Manufacture of a nothing on insulator nano-structure with two Cr/Au nanowires separated by 18 nm air gap

Design of the Technological Flow to Produce a Planar Variant of the Nothing on Insulator Device and its Tunneling Conduction

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