Vertical β‐Ga₂O₃ Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

Abstract

Herein, vertical Schottky barrier diodes (SBDs) based on a bulk β‐Ga2O3 substrate are developed. The devices feature an ion‐implanted planar edge termination (ET) structure, which can effectively smoothen the electric field peak and reduce the electric field crowding at the Schottky junction edge. Greatly enhanced reverse blocking characteristics including ≈103× lower reverse leakage current and 1.5× higher breakdown voltage (VB) are achieved, whereas good forward conduction such as a reasonably high on‐state current density and near‐unity ideality factor is maintained. In addition, the switching performance of the fabricated vertical β‐Ga2O3 SBDs is investigated using a double‐pulse test circuit. When switching from an on‐state current of 350 mA to a reverse‐blocking voltage of −100 V, the vertical β‐Ga2O3 SBDs exhibit fast reverse recovery with a reverse recovery time (trr) of ≈14.1 ns and reverse recovery charge (Qrr) of ≈0.34 nC, outperforming the Si fast recovery diode (FRD) of similar ratings. The results indicate a great promise of vertical β‐Ga2O3 SBDs for high‐voltage fast switching applications.

Temperature-Dependent Electrical Characteristics of Ni/Au Vertical Schottky Barrier Diodes on β-Ga2O3 Epilayers

“…24,25 Schottky barrier diodes based on β-Ga 2 O 3 with various metal contacts and designs have been investigated. [26][27][28][29][30][31][32][33][34][35][36][37] High work function metals (Ni, Pt, Cu, W and Ir) were found to be suitable for fabricating SBDs with n-type semiconductor β-Ga 2 O 3 . 38,39 SBDs are the main components of power rectifiers because of their fast switching speed, which is essential for improving the efficiency of inductive motor controllers and power supplies.…”

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

“…Edge termination (ET) implanting a high dose of argon (Ar) or magnesium (Mg) or nitrogen atoms into the Ga 2 O 3 at the device periphery has also been reported. − The implantation damaged the exposed Ga 2 O 3 , which turned into a high resistive region and effectively reduced the field crowding at the device periphery.…”

-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter

“…A double-pulse test (DPT) circuit was designed to evaluate the switching performance of Ga2O3 SBD [39,[49][50][51][52]. The schematic of DPT circuit and its switching process are shown in Fig.…”