Vertically stacked non-volatile memory devices – material considerations

Godlewski, M.; Guziewicz, E.; Szade, J.; Wójcik-Głodowska, A.; Wachnicki, Ł.; Krajewski, T.; Kopalko, K.; Jakieła, R.; Yatsunenko, S.; Przedziecka, E.; Kruszewski, Piotr; Huby, Nolwenn; Tallarida, G.; Ferrari, S.

doi:10.1016/j.mee.2008.09.012

Cited by 40 publications

(60 citation statements)

References 34 publications

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“…The most promising one is the 3D-like, with active elements stacked one over another. The research on such devices is very advanced in the case of so-called cross-bar memories [1], which are shortly described below.…”

Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

“…This similarity means that as in the case of ICs miniaturization limit will soon be achieved and that we need another approach to increase further a memory storage capacity. One of the most studied ideas here is based on vertically stacked memory cells (cross-bar memory) (see, e.g., [1][2][3]). The storage density of such memory devices depends on 4F 2 /n ratio, where F is a node standard (e.g., 65 nm) and n number of stacks.…”

Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

“…In 3D structures, with active parts stacked one over other, metal paths will not be on top of the devices, but both beneath and above electronic elements. This drastically restricts growth temperature to below 350-400 °C [1,2]. For higher temperatures metal paths will be affected.…”

Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

“…By a selector we mean here either a Schottky or p-n junction [1,3]. The selector must be characterized by a very high rectification factor to block cross talk between cells.…”

Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

“…The research on 3D-like devices is the most advanced in the case of nonvolatile memories. One of the materials studied for a new generation of so-called cross-bar memories with a 3D architecture is ZnO [1], as we discuss below. This and other possible use of ZnO in electronic devices will be discussed in the present work.…”

Section: Introductionmentioning

confidence: 99%

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Zinc oxide for electronic, photovoltaic and optoelectronic applications

Godlewski

Guziewicz

Kopalko

et al. 2011

Low Temperature Physics

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We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.

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Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

“…By a selector we mean here either a Schottky or p-n junction [1,3]. The selector must be characterized by a very high rectification factor to block cross talk between cells.…”

Section: Zno For 3d Memory Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Zinc oxide for electronic, photovoltaic and optoelectronic applications

Godlewski

Guziewicz

Kopalko

et al. 2011

Low Temperature Physics

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Effects ofin-situmolecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition

Park

Yang

Kim

et al. 2014

Phys. Status Solidi A

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The possibility of employing molecular oxygen (O2) for reducing the carrier concentration of zinc oxide (ZnO) thin films grown by atomic layer deposition was investigated. The exposure of O2 after the oxygen‐source pulse (deionised water) was eventually highly effective for decreasing the carrier concentration over 3–4 orders of magnitude. In contrast, the O2 pulse, when following the zinc source pulse (diethylzinc), had a minimal effect on the electrical property. Detailed structural, chemical and electrical analyses of the oxygen‐modulated ZnO thin films were conducted. Successful electrical modulation of the ZnO thin films was further demonstrated by fabricating back‐gated thin film transistors. The improvement in the on‐to‐off current ratio of the transistors was achieved by the proper exposure of O2.

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Electrical and optical properties of zinc oxide layers grown by the low-temperature atomic layer deposition technique

Krajewski

Dybko

Luka

et al. 2010

phys. stat. sol. (b)

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This paper reports on the electrical and optical properties of zinc oxide thin films grown at the temperature range between 160 and 240 8C by the atomic layer deposition method using diethylzinc (Zn(C 2 H 5 ) 2 , DEZn) and deionized water precursors. Silicon and glass were used as substrates for the ZnO growth. These films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), low temperature photoluminescence (LT PL) and low temperature Hall effect measurements. This analysis revealed that all the obtained as-grown ZnO layers are fairly smooth (with a roughness RMS parameter less than 4 nm), show a metallic-like conductivity, exhibited a carriers' concentration (n) of 10 19 -10 20 cm À3 which was found to be practically independent of temperature between 7 and 300 K. From the LT PL spectra, it was established that the carriers' concentration is nearly inversely proportional to the intensity of the LT PL edge emission peak. These observations, together with the fact that the Hall mobility slightly increases at higher temperatures, indicate the existence of a competitive scattering mechanism (on grain boundaries as well as on ionized impurities). However, ionized impurity scattering seems to be the dominant factor limiting the carrier mobility in the discussed case. Moreover, the results suggest that efficient non-radiative Auger processes are responsible for the observed photoluminescence (PL) quenching in the samples with higher electron concentration.

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Vertically stacked non-volatile memory devices – material considerations

Cited by 40 publications

References 34 publications

Zinc oxide for electronic, photovoltaic and optoelectronic applications

Zinc oxide for electronic, photovoltaic and optoelectronic applications

Effects ofin-situmolecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition

Electrical and optical properties of zinc oxide layers grown by the low-temperature atomic layer deposition technique

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