Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped <i>p</i>-type GaAs

Hanna, Melvin W.; Lu, Z. H.; Majerfeld, A.

doi:10.1063/1.104960

Cited by 127 publications

(32 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5 shows a plot of mobility as a function of hole concentration, comparing our Hall and IR mobility results to Hall for GaAs:C reported in earlier studies. [3][4][5]12 Although our m h * value is different from the theoretical value adopted by FSP ͑Ref. 28͒ in their work on GaAs:Be, the mobility results for p-type GaAs:C shown in Fig.…”

Section: ͑8͒mentioning

confidence: 73%

“…Recently, a number of growth techniques, including metallo-organic chemical vapor deposition, [1][2][3] metallo-organic vapor phase epitaxy, [4][5][6][7] chemical beam epitaxy, 8 and molecular-beam epitaxy ͑MBE͒, 3,[9][10][11][12][13] have made it possible to achieve carbondoped thin-film fabrication with hole concentrations as high as 1.5ϫ10 21 cm Ϫ3 . 12 C-doped GaAs has been shown to have advantages over Be-doped and Zn-doped GaAs for applications in devices requiring pϩϩ GaAs layers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Songprakob

Zallen²,

Liu³

et al. 2000

Phys. Rev. B

View full text Add to dashboard Cite

Infrared reflectivity measurements ͑200-5000 cm Ϫ1 ) and transmittance measurements ͑500-5000 cm Ϫ1 )have been carried out on heavily-doped GaAs:C films grown by molecular-beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000-3000 cm Ϫ1 region and the onephonon band near 270 cm Ϫ1 rides on a progressively increasing high-reflectivity background. An effectiveplasmon/one-phonon dielectric function with only two free parameters ͑plasma frequency p and damping constant ␥) gives a good description of the main features of both the reflectivity and transmittance spectra. The dependence of p 2 on hole concentration p is linear; at pϭ1.4ϫ10 20 cm Ϫ3 , p is 2150 cm Ϫ1 . At each doping, the damping constant ␥ is large and corresponds to an infrared hole mobility that is about half the Hall mobility. Secondary-ion mass spectroscopy and localized-vibrational-mode measurements indicate that the Hall-derived p is close to the carbon concentration and that the Hall factor is close to unity, so that the Hall mobility provides a good estimate of actual dc mobility. The observed dichotomy between the dc and infrared mobilities is real, not a statistical-averaging artifact. The explanation of the small infrared mobility resides in the influence of intervalence-band absorption on the effective-plasmon damping, which operationally determines that mobility. This is revealed by a comparison of the infrared absorption results to Braunstein's low-p p-GaAs spectra and to a k"p calculation extending Kane's theory to our high dopings. For n-GaAs, which lacks infrared interband absorption, the dc and infrared mobilities do not differ.

show abstract

Section: ͑8͒mentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Songprakob

Zallen²,

Liu³

et al. 2000

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…[3, 4J Ultra-high doping levels (p>1020 cm-3 ) have been attained with epitaxial growth. [5,6] However, implantation ofC is not as successful. Implanted alone, activation of C is less than 10%.…”

Section: Introductionmentioning

confidence: 99%

Implantation of Carbon in GaAs and Compensating Native Defects

Moll¹,

Ager

Yu³

et al. 1993

MSF

View full text Add to dashboard Cite

“…With this method, however, the V/III ratio could not be controlled independently from the dopant source flow. A higher grade of carbon concentration control is possible with the extrinsic doping, which can be realised with different halomethane sources [9][10][11]. Among them we have selected CBr 4 , because is very efficient owing to the low strength of the chemical bond (about 65 Kcal/mole) between carbon nucleus and Br ligand [12].…”

mentioning

confidence: 99%

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

Timò

Flores

Campesato

2005

Cryst. Res. Technol.

View full text Add to dashboard Cite

Growth aspects related to AlGaAs/GaAs tunnel diodes for multijunction solar cell structures are presented. Test structures have been grown in order to show the correct way for checking the thermal resistance of tunnel diodes. AlGaAs:C lattice contraction as a function of carbon concentration and growth temperature has been studied by using XRD, Hall and Room temperature photoluminescence characterisation. The XRD experimental results have been successfully compared with the lattice contraction model reported by W.E Hoke et al.

show abstract

Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p-type GaAs

Abstract: Articles you may be interested inCharacterization of heavily carbondoped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Cited by 127 publications

References 15 publications

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs:C

Implantation of Carbon in GaAs and Compensating Native Defects

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

Contact Info

Product

Resources

About