Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric

Microstructure and dielectric properties of amorphous BaSm2Ti4O12 thin films for MIM capacitor

“…1,10 Recently, it was reported that a 17 nm-thick TiTaO film had a very high capacitance density of 23 fF/m, which would satisfy the requirement for RF MIM capacitors, however its leakage current density was relatively high. 11 A high capacitance density of 17.6 fF/m 2 was also obtained from a capacitor consisting of a 8 nm-thick Nb 2 O 5 film with HfO 2 (3 nm)/Al 2 O 3 (1 nm) barriers. 12 However, the problem of its comparatively low leakage current density remains to be overcome.…”

RFIC TaN/SrTiO$_3/$TaN MIM Capacitors With 35fF$/muhboxm^2$Capacitance Density

“…Therefore, high-dielectric has been continuously evolving from SiON ( 4-7) [1]- [3], Al O 10 [4]- [6], and HfO 20 [7] or Ta O 24 [8], [9], according to International Technology Roadmap for Semiconductors (ITRS). For value larger than 25, ternary dielectric is needed and we have previously shown good RF characteristics of MIM capacitors using TaTiO 45 [10], [11]. In this study, we have further developed high performance RF MIM capacitors with the very high-Strontium Titanate oxide SrTiO .…”

“…The measured -parameters were followed by a standard deembedding procedure using a dummy open device [5], [11]- [13]. The series parasitic impedances in RF transmission lines are also deembedded using a through dummy device [10]- [13]. The RF frequency capacitance value was extracted from measured -parameters using an equivalent circuit model [5], [11].…”

“…In addition, a near constant capacitance value with little voltage and frequency dependence is obtained for the STO MIM capacitor, which is important for RF IC under large voltage swing condition. Such high capacitance density is due to the very high value of 169 in STO dielectric that is significantly larger than the 20 of HfO used in current DRAM manufacture and also higher than the 45 in TaTiO MIM capacitors [10], [11]. Since the STO is also shown in the future DRAM technology roadmap [14], it is highly possible to integrate the RF capacitor with DRAM for multifunctional SoC application.…”

Frequency Effect on Voltage Linearity of $ \hbox{ZrO}_{2}$-Based RF Metal–Insulator–Metal Capacitors

“…F ROM SiO 2 (κ ∼ 4.2), the high-κ dielectric integrated in microelectronics chips has evolved to Si 3 N 4 (κ ∼ 7), Al 2 O 3 (κ ∼ 10), Ta 2 O 5 (κ ∼ 25), and HfO 2 (κ ∼ 22) [1], [2]. This letter focuses on the in situ characterization of the zirconium oxide, ZrO 2 (κ ∼ 35), which is a very promising material for next circuit generations [3].…”