Very Long SiC‐Based Coaxial Nanocables with Tunable Chemical Composition

Abstract

We present a simple process for the fabrication of very long SiC‐based coaxial nanocables (NCs). The versatility of this technique is confirmed by the ability to change the chemical composition of the NC outer layers from silica to carbon and boron nitride. The NCs consist of a SiC core approximately 30 nm in diameter with lengths up to several hundred of nanometers. The thickness of the coating is in the range 2–10 nm. The morphology and structural characterization of the NCs is investigated by scanning electron microscopy (SEM) and high‐resolution transmission electron microscopy (HRTEM), respectively, and their chemical composition is probed by electron energy loss spectroscopy (EELS). A vapor–solid growth mechanism is proposed to explain the growth of SiC‐based NCs of various chemical compositions, depending on the chemical nature of the vapor phase. Because of the large quantity of very long and interlaced NCs produced during the synthesis, the macroscopic aspect of the as‐grown material is like a self‐supported felt.

SiC nanowires: material and devices

“…The above oxide-assisted growth has been also applied by Bechelany et al [35] in the case of SiC NW growth. They have proposed a VS-based method without usage of catalyst for the mass production of 3C-SiC-based nanostructures, which is capable for the fabrication of large amounts of 3C-SiC NWs with tuneable geometric features and surfaces and that could potentially be chemically modified in situ.…”

“…Figure 4 shows typical SEM photos from the different categories of NW shapes. NWs are either straight mostly aligned towards one direction (figure 4a, [32]) or straight and interlaced between them (figure 4b, [43]) or straight and interlaced but with entanglement points (figure 4c, [46]) or curved/buckled interweaved between them (figure 4d, [35]). There is not an obvious correlation between growth mechanism and these categories.…”

“…Peaks attributed to the Si substrate and the stacking faults (sf) of SiC were also found in some cases as in Figure 6 although they are not present in the spectra reported in most studies. Additional peaks corresponding to other [32], [43], [46] and [35] respectively).…”

Comparative study on dry etching of α- and β-SiC nano-pillars

“…Many efforts have been carried out to fabricate the SiC nanostructures by the bottom-up methods, such as vaporliquid-solid [1] or vapor-solid method [2]. However, those as-grown SiC NWs significantly suffer from a high density of structural defects, such as stacking faults, and unintentional high n-type doping level (~ 10 19 -10 20 cm -3 ).…”

Silicon Carbide Nanowires Synthesis and Preliminary Investigations

“…Synthesis of silicon carbide wires of nanometer diameters is of interest because of the unique mechanical, optical, electronic, and other properties of these nanowires. There are three main growth mechanisms of SiC nanowires: (A) vapor-liquid-solid (VLS) [1,2], (B) template-assisted growth from carbon nanotubes (CNTs) [3][4][5][6] and silicon nanowires [7], and (C) vaporsolid mechanism from nanostructured carbon particles [8,9], silica [10], silicon [11], and silicon carbide [12]. The mechanism of formation of SiC nanowires (SiC NW) from carbon nanotubes has not been fully characterized.…”