Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes

“…Pure Ge grown directly onto Si is the best candidate for such photo-detectors, due to its band gap of 0.8 eV at room temperature [2][3][4][5]. Ge layers can also be used in conjunction with advanced gate materials such as Ge oxynitride [6], ZrO 2 [7], Al 2 O 3 [8] or HfO 2 [9][10][11] for the formation of bulk Ge or Ge-On-insulator (GOI) [12]-based metal oxide semiconductor field effect transistors (MOSFETs). Boron-doped Ge thin epilayers can also be used in Si-based MOSFETs for the formation of raised sources and drains [13].…”

An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step

“…In a bulk form, they can serve as templates for the growth of tensile-strained Si surface channels with both high electron and hole mobilities (for Ge contents >30%) [7,8]. As far as thick, pure Ge layers are concerned, they can be used when grown on fullsheet Si(0 0 1) wafers as starting materials for the formation of Ge-On-Insulator substrates [9] with (when combined with high-K gate dielectrics [10][11][12][13]) vastly enhanced electron and hole mobilities at low electrical fields [14]. Ge can also be used, when selectively grown inside the Si windows of dielectric masked wafers, as the active part of highly efficient photo-detectors operating in the low loss wavelength windows (1.3-1.6 lm) of silica fibers [15,16].…”

High Performance Organic Thin-Film Transistors and Nonvolatile Memory Devices Using High-Dielectric Layers

“…3(c). Such partially or even fully depleted channel has previously led to the invention of low leakage current Ge-on-Insulator (GOI) MOSFET (Huang et al, 2003), where the very high leakage current from small energy bandgap Ge (0.66 eV) is the major concern of the Ge MOSFET . Although many elements in the periodic table have low work-function to meet the requirement of low off-state leakage, we choose the TaN as the gate electrode.…”