Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications

Bouloukou, A.; Boudjelida, B.; Sobih, Ayman G.; Boulay, S.; Sly, J.; Missous, M.

doi:10.1016/j.mssp.2008.11.006

Cited by 13 publications

(6 citation statements)

References 17 publications

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“…This characterisation technique becomes an essential in the semiconductor industry and research laboratories because of its relatively simple method, low cost, and fast turnaround time. The detailed information about the steps involved in Hall effect measurement is already reported by Bouluku [8]. In general, Hall Effect can be observed when a small transverse voltage (Hall voltage) appeared across a current-carrying thin metal strip in an applied magnetic field (principle of Lorentz force).…”

Section: Epitaxial Structuresmentioning

confidence: 91%

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The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication

Isa

Ong

Charin

et al. 2015

AMM

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We report the development of two epilayers namely the baseline highly strained channel and enhanced low gate leakage samples. The Hall data shows that the enhanced epilayer portraying higher sheet carrier concentration, but comparable carrier mobility in the 2-DEG layer, as compared to the baseline sample. The WinGreen simulation also conformed the enhanced epilayer advantages where wider Schottky barrier is observed and subsequently double carrier concentration is simulated in the channel. Both samples show low AuGe/Au Ohmic contact resistivity of approximately 0.16 Ω.mm. A tremendous advantage on 1 μm Schottky gate leakage is also recorded on enhanced epilayer where the leakage is more than seven times lower than that of the baseline sample. The resulted characteristics are much better than the reported submicron device, thus this device has find an important application in high-gain lossless transmission, especially in underwater optical communication system.

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Section: Epitaxial Structuresmentioning

confidence: 91%

“…Previously, a novel high-breakdown pHEMT was successfully fabricated to suit the Low Noise Amplifier (LNA) designs [5][6][7] . In conjunction with the earlier work, the original epitaxial layer was further improved by precision control of band gap engineering, which resulted for better DC, RF, and noise performances.…”

Section: Introductionmentioning

confidence: 99%

The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication

Isa

Ong

Charin

et al. 2015

AMM

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“…Using Agilent Integrated Circuit Characterization and Analysis Program (ICCAP) standard computer-aided design (CAD) tools, the intrinsic and extrinsic parameters were extracted from the measured S-parameter data. The intrinsic model parameters were obtained from hot (active) device bias point, while the extrinsic elements were extracted from the cold (pinched) device measurement [12]. The final element values for linear models were determined by optimization of the initial value to accurately fit the measured data.…”

Section: Linear Model Developmentmentioning

confidence: 99%

Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

Jubadi¹,

Packeer²,

Missous³

2017

IJECE

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<span>An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.</span>

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“…The conventional lattice matched In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As pseudomorphic HEMT (pHEMT) on an InP substrate, incorporating an In 0.7 Ga 0.3 As compressively strained channel, is an excellent choice for fabricating high-frequency low-noise devices, owing in part to its high mobility and high saturation velocity due to the high indium content in the InGaAs channel [4,5]. Unfortunately, a conventional low-noise pHEMT employing this material system experiences a low breakdown voltage of about 2-4 V and a high gate leakage of around 1 mA mm −1 at −5 V [6,7].…”

Section: Introductionmentioning

confidence: 99%

New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications

et al. 2021

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Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (<2 V) and the very high gate leakage current (∼1 mA/mm), which degrade device and performance especially in monolithic microwave integrated circuits low-noise amplifiers (MMIC LNAs). These drawbacks are caused by the impact ionization in the low band gap, i.e., the InxGa(1−x)As (x = 0.53 or 0.7) channel material plus the contribution of other parts of the epitaxial structure. The capability to achieve higher frequency operation is also hindered in conventional InGaAs/InAlAs/InP pHEMTs, due to the standard 1 μm flat gate length technology used. A key challenge in solving these issues is the optimization of the InGaAs/InAlAs epilayer structure through band gap engineering. A related challenge is the fabrication of submicron gate length devices using I-line optical lithography, which is more cost-effective, compared to the use of e-Beam lithography. The main goal for this research involves a radical departure from the conventional InGaAs/InAlAs/InP pHEMT structures by designing new and advanced epilayer structures, which significantly improves the performance of conventional low-noise pHEMT devices and at the same time preserves the radio frequency (RF) characteristics. The optimization of the submicron T-gate length process is performed by introducing a new technique to further scale down the bottom gate opening. The outstanding achievements of the new design approach are 90% less gate current leakage and 70% improvement in breakdown voltage, compared with the conventional design. Furthermore, the submicron T-gate length process also shows an increase of about 58% and 33% in fT and fmax, respectively, compared to the conventional 1 μm gate length process. Consequently, the remarkable performance of this new design structure, together with a submicron gate length facilitatesthe implementation of excellent low-noise applications.

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Very low leakage InGaAs/InAlAs pHEMTs for broadband (300MHz to 2GHz) low-noise applications

Cited by 13 publications

References 17 publications

The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication

The Development of Novel High Speed – Low Noise pHEMT Device for Lossless Underwater Optical Communication

Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier

New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications

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