Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

“…Multiterminal cells, such as FeFETs, ECRAM, and 3T1C + 2T2R (3‐transistor 1‐capacitor + 2‐transistor 2‐resistor), allow for more controllable and linear analog switching as a trade‐off for complexity, but their reliability requires more evaluation due to the complex cell structure and unclear working mechanisms. Overall, RRAM appears to be more attractive, enabling a compact two‐terminal structure (each cell occupies 4 F 2 ), great scalability (even 2 nm), a high programming speed (even <1 ns), and low energy consumption (<1 pJ) . An RRAM array in a crossbar architecture can enable an extremely high density, excellent scalability, and parallel operation …”

The future of electronics based on memristive systems

“…A class of memristors used in memory applications is also often called resistive random access memory (RRAM) 4,5 . Fundamental device studies have shown that the device can be scaled to sub-10 nm feature sizes 6 and retain memory states for years 7 , while offering desirable device properties such as subnanosecond switching speed 8,9 , long write-erase endurance 10 and low programming energy (for example, nanoamperes 11 ). It should be noted that while many of the above favourable properties have been realized repeatedly, a single material system that combines them all simultaneously remains an open challenge.…”

Ultra‐Low Power Multilevel Switching with Enhanced Uniformity in Forming Free TiO2−x‐Based RRAM with Embedded Pt Nanocrystals

“…The latter, however, results in high power operation which is not desirable and can be detrimental in a highly dense memory cell. Zhou et al recently demonstrated multilevel conductive‐bridge RAM (CBRAM) devices that operate at ultra‐low current (≈nA range) but with a high cycle‐to‐cycle variability. In general, although it may seem trivial to gain multilevel control, the high cycle‐to‐cycle variability (which can also be described as low uniformity) becomes a critical problem in a real memory cell as it alters the switching characteristics which in turn limits the active memory window and degrade the cycling performance.…”